Semiconductor light emitting element and semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-9356424-B2
Application number	US-201414327838-A
Country	US
Kind code	B2
Filing date	Jul 10, 2014
Priority date	Jul 19, 2013
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

There is provided a semiconductor light emitting element that is excellent in reliability and is capable of being driven by a lower voltage and a semiconductor light emitting device that includes the semiconductor light emitting element. The semiconductor light emitting element includes: a semiconductor layer; an electrode layer; a metal layer that contains a hydrogen storage metal; and a plated layer in order.

First claim

What is claimed is:

1. A semiconductor light emitting element, comprising, in order:
a semiconductor layer;
a contact layer;
an electrode layer;
a metal layer that contains at least one of Palladium (Pd) or Nickel (Ni) as a hydrogen storage metal and that serves as a pad electrode, the metal layer completely overlapping the electrode layer; and
a plated layer distinct from the metal layer.

2. The semiconductor light emitting element according to claim 1 , wherein:
the semiconductor layer is a nitride semiconductor layer,
the contact layer is a p-side contact layer,
the electrode layer is a p-side electrode layer, and
the plated layer contains gold.

3. The semiconductor light emitting element according to claim 1 , wherein the electrode layer has a multilayer structure including a layer that is in contact with the semiconductor layer and contains palladium(Pd).

4. The semiconductor light emitting element according to claim 1 , wherein the metal layer has a multilayer structure including a palladium (Pd) layer and a nickel (Ni) layer.

5. A semiconductor light emitting device, comprising:
a base; and
a semiconductor light emitting element, the semiconductor light emitting element joined to the base via a junction layer and configured by, in order from the base, a plated layer, a metal layer distinct from the plated layer that contains at least one of Palladium (Pd) or Nickel (Ni) as a hydrogen storage metal and that serves as a pad electrode, an electrode layer, a contact layer, and a semiconductor layer.

6. The semiconductor light emitting device according to claim 5 , wherein:
the semiconductor layer is a nitride semiconductor layer,
the contact layer is a p-side contact layer,
the electrode layer is a p-side electrode layer, and
the plated layer contains gold.

7. The semiconductor light emitting device according to claim 5 , further comprising a barrier layer between the junction layer and the electrode layer, wherein the junction layer is a solder layer that contains Sn (tin), and the barrier layer prevents diffusion of Sn.

Assignees

• Sony Corp

Inventors

• Murayama Masahiro
• Ishiai Yoshinori
• Kikuchi Yuichiro

Classifications

• H01S5/02476 Primary

  Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements · CPC title

• H01S5/04252

  characterised by the material · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title

• H01S5/34333

  with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser · CPC title

• H01S2301/176

  Specific passivation layers on surfaces other than the emission facet · CPC title