Medium voltage MOSFET device

Patent metadata

Field	Value
Publication number	US-9356133-B2
Application number	US-201313744097-A
Country	US
Kind code	B2
Filing date	Jan 17, 2013
Priority date	Feb 1, 2012
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate;
a drain drift region of a first conductivity type disposed in said substrate;
transistor RESURF trenches defined in said drain drift region, said transistor RESURF trenches each having a trench liner of dielectric material and a RESURF field plate disposed on said trench liner;
a split gate disposed over said drain drift region between said transistor RESURF trenches, said split gate having a central opening;
a body region of a second conductivity type, opposite from said first conductivity type, disposed in said substrate abutting said transistor RESURF trenches;
a source region formed in said body region;
a two-level lightly doped drain (LDD) region of said first conductivity type disposed in said substrate under said central openings in said split gate;
source-contact trenches defined into said transistor RESURF trenches from a top surface of said substrate, said source-contact trenches exposing said source region; and
a contact metal stack disposed in said source-contact trenches, said contact metal stack making contact with said source region and said RESURF field plate in each of said transistor RESURF trenches.

2. The semiconductor device of claim 1 , further comprising a perimeter RESURF trench surrounding said transistor RESURF trenches, in which said perimeter RESURF trench is connected to at least one instance of said transistor RESURF trenches so that said RESURF field plate in said perimeter RESURF trench is electrically connected to said RESURF field plate in said at least one instance of said transistor RESURF trenches.

3. The semiconductor device of claim 1 , further comprising a perimeter RESURF trench surrounding said transistor RESURF trenches, in which said perimeter RESURF trench is free of connections to said transistor RESURF trenches and said RESURF field plate in said perimeter RESURF trench is electrically connected to said contact metal stack.

4. The semiconductor device of claim 1 , further comprising a perimeter RESURF trench surrounding said transistor RESURF trenches, in which said RESURF field plate in said perimeter RESURF trench and said RESURF field plate in said transistor RESURF trenches comprise silicon.

5. The semiconductor device of claim 1 , in which said contact metal stack includes a layer of titanium disposed on lateral sides and bottoms of said source-contact trenches, and a plurality of layers of titanium nitride disposed on said layer of titanium.

6. The semiconductor device of claim 1 , in which said contact metal stack overlaps said split gate.

7. The semiconductor device of claim 1 , in which said two-level LDD includes a channel control region and a punch-through region disposed below said channel control region, said punch-through region having a higher average doping density than said channel control region.

8. The semiconductor device of claim 1 , further including a pre-metal dielectric (PMD) layer over said substrate adjacent to said split gate, said PMD layer having a stress less than 100 megapascals.

9. The semiconductor device of claim 1 , further comprising a perimeter RESURF trench surrounding said transistor RESURF trenches, in which an edge of a drain dielectric layer proximate to said perimeter RESURF trench has a sloped profile of 30 degrees to 60 degrees from a horizontal plane, and said split gate includes link portions which traverse said sloped profile.

10. The semiconductor device of claim 1 , further comprising a perimeter RESURF trench surrounding said transistor RESURF trenches, in which said split gate, said body region, said two-level LDD and said source regions are disposed between said transistor RESURF trenches and said perimeter RESURF trench.

Assignees

• Texas Instruments Inc

Inventors

• Kocon Christopher Boguslaw
• Kawahara Hideaki
• Molloy Simon John
• Suzuki Satoshi
• Neilson John Manning Savidge

Classifications

• H10P50/282

  of inorganic materials · CPC title

• H10D64/519

  characterised by their top-view geometrical layouts · CPC title

• H10D64/111

  Field plates · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• H10D62/83

  being Group IV materials, e.g. B-doped Si or undoped Ge · CPC title