Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
US9355877B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9355877-B2 |
| Application number | US-201313802385-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2013 |
| Priority date | Aug 31, 2012 |
| Publication date | May 31, 2016 |
| Grant date | May 31, 2016 |
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A carrier substrate includes: a base substrate; a first coating layer on a first surface of the base substrate; and a second coating layer on a second surface of the base substrate. The thermal expansion coefficients of the first coating layer and the second coating layer are greater than a thermal expansion coefficient of the base substrate, and a thickness of the first coating layer is different from a thickness of the second coating layer.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a flexible display device, the method comprising: preparing a carrier substrate; forming a display unit on the carrier substrate; and encapsulating the display unit, wherein the preparing of the carrier substrate comprises: forming a first coating layer on a first surface of a base substrate so as to cause a warpage of the base substrate; and forming a second coating layer on a second surface of the base substrate so as to compensate for the warpage of the base substrate, wherein a thickness of the second coating layer is greater than a thickness of the first coating layer, and the display unit is formed on the second coating layer. 2. The method of claim 1 , wherein the first coating layer and the second coating layer comprise polyimide. 3. The method of claim 1 , wherein the thickness of the first coating layer is from about 6 μm to about 8 μm, and the thickness of the second coating layer is from about 8 μm to about 12 μm. 4. The method of claim 1 , wherein the base substrate comprises glass, and thermal expansion coefficients of the first coating layer and the second coating layer are greater than a thermal expansion coefficient of the base substrate. 5. The method of claim 1 , wherein the display unit comprises an active layer, and the active layer is formed by crystallizing amorphous silicon. 6. The method of claim 1 , further comprising separating the second coating layer having the display unit on an upper surface thereof from the base substrate. 7. The method of claim 6 , wherein the separating the second coating layer from the base substrate comprises irradiating a laser beam having a wavelength of from about 250 nm to about 350 nm and an energy of from about 250 mJ/cm2 to about 350 mJ/cm2 onto an interface between the second coating layer and the base substrate.
with parts of the auxiliary support remaining in the finished device · CPC title
used as a support during build up manufacturing of active devices · CPC title
Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title
using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] · CPC title
using temporarily an auxiliary support · CPC title
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