Method and apparatus for growing indium oxide (in2o3) single crystals and indium oxide (in203) single crystal
US-2015125717-A1 · May 7, 2015 · US
β-Ga2O3-based single crystal substrate
US9349915B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9349915-B2 |
| Application number | US-201514633106-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 26, 2015 |
| Priority date | Feb 28, 2014 |
| Publication date | May 24, 2016 |
| Grant date | May 24, 2016 |
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Abstract
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A β-Ga 2 O 3 -based single crystal substrate includes a β-Ga 2 O 3 -based single crystal. The β-Ga 2 O 3 -based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.
First claim
Opening claim text (preview).
What is claimed is: 1. A β-Ga 2 O 3 -based single crystal substrate, comprising a β-Ga 2 O 3 -based single crystal, wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds, and wherein the full width at half maximum of x-ray rocking curve is obtained at a (−201) plane or a (001) plane of the β-Ga 2 O 3 -based single crystal. 2. The β-Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein the full width at half maximum is not more than 35 seconds. 3. A β-Ga 2 O 3 -based single crystal substrate, comprising a β-Ga 2 O 3 -based single crystal, wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds, and wherein the 13-Ga 2 O 3 -based single crystal comprises a main surface with a plane orientation of (−201), (101) or (001). 4. The β-Ga 2 O 3 -based single crystal substrate according to claim 3 , wherein the full width at half maximum is not more than 35 seconds. 5. A β-Ga 2 O 3 -based single crystal substrate, comprising an average dislocation density of less than 9×10 4 cm −2 . 6. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , wherein the average dislocation density is not more than 7.8×10 4 cm −2 . 7. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , further comprising a main surface with a plane orientation of (−201), (101), or (001). 8. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , wherein the substrate is free from any twinned crystal. 9. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , wherein the substrate further comprises a diameter of not less than 2 inches. 10. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , further comprising a region free from any twinning plane, wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and a main surface. 11. A β-Ga 2 O 3 -based single crystal substrate, comprising β-Ga 2 O 3 -based single crystal, wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds, and wherein the substrate is free from any twinned crystal. 12. A β-Ga 2 O 3 -based single crystal substrate, comprising β-Ga 2 O 3 -based single crystal, wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds, and wherein the substrate further comprises a diameter of not less than 2 inches. 13. A β-Ga 2 O 3 -based single crystal substrate, comprising β-Ga 2 O 3 -based single crystal, wherein the β-Ga 2 O 3 -based single crystal comprises a full width at half maximum of an x-ray rocking curve of less than 75 seconds, wherein the substrate further comprises a region free from any twinning plane, and wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and a main surface.
Assignees
Inventors
Classifications
- C30B15/34Primary
Edge-defined film-fed crystal-growth using dies or slits · CPC title
Bodies · CPC title
- H10H20/817Primary
characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous · CPC title
Electricity · mapped topic
- H01L33/16Primary
Electricity · mapped topic
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- What does patent US9349915B2 cover?
- A β-Ga 2 O 3 -based single crystal substrate includes a β-Ga 2 O 3 -based single crystal. The β-Ga 2 O 3 -based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.
- Who is the assignee on this patent?
- Tamura Seisakusho Kk, Koha Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B15/34. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 24 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).