Self-aligned bipolar junction transistors

Patent metadata

Field	Value
Publication number	US-9349845-B2
Application number	US-201414495057-A
Country	US
Kind code	B2
Filing date	Sep 24, 2014
Priority date	Mar 20, 2013
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

Device structures and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an extrinsic base is formed that is arranged in juxtaposition with the intrinsic base on the substrate. The intrinsic base and terminal are respectively comprised of first and second semiconductor materials.

First claim

What is claimed is:

1. A device structure for a bipolar junction transistor formed using a substrate, the device structure comprising:
an intrinsic base on the substrate, the intrinsic base comprised of a first semiconductor material from a first section of a single-crystal layer;
a first terminal on the intrinsic base, the first terminal separated from the substrate by the intrinsic base, the first terminal having a sidewall, and the first terminal comprised of a second semiconductor material different from the first semiconductor material;
an extrinsic base arranged in juxtaposition with the intrinsic base on the substrate, the extrinsic base comprised of the first semiconductor material from a second section of the single-crystal layer, and the extrinsic base coextensive with the intrinsic base along a vertical interface that is aligned with the sidewall of the first terminal; and
an isolation structure in the substrate, the isolation structure including a portion that underlies the extrinsic base, and the portion of the isolation structure extending laterally past the vertical interface to underlie the intrinsic base.

2. The device structure of claim 1 wherein the first terminal is an emitter of the bipolar junction transistor.

3. The device structure of claim 1 wherein the first terminal is a collector of the bipolar junction transistor.

4. The device structure of claim 1 wherein the intrinsic base has a first electrical conductivity, and the extrinsic base has a second electrical conductivity greater than the first electrical conductivity of the intrinsic base.

5. The device structure of claim 1 wherein the first terminal and the intrinsic base have equal widths in a plane parallel to a top surface of the substrate.

6. The device structure of claim 1 wherein the portion of the isolation structure extends directly beneath the intrinsic base.

7. The device structure of claim 1 wherein the intrinsic base and the extrinsic base have respective top and bottom surfaces that are coplanar.

8. The device structure of claim 1 wherein the intrinsic base and the extrinsic base have the same layer thickness.

9. The device structure of claim 1 wherein the portion of the isolation structure includes an inclined sidewall that extends laterally past the vertical interface to underlie the intrinsic base.

Assignees

• Globalfoundries Inc

Inventors

• Harame David L
• Liu Qizhi

Classifications

• G06F30/30

  Circuit design · CPC title

• H10D84/641

  Combinations of only vertical BJTs (vertical complementary BJTs H10D84/673) · CPC title

• H10D62/184

  of lateral BJTs · CPC title

• H10D62/177

  Base regions of bipolar transistors, e.g. BJTs or IGBTs · CPC title

• H10D62/115

  Dielectric isolations, e.g. air gaps · CPC title