Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-9349587-B2
Application number	US-201314044358-A
Country	US
Kind code	B2
Filing date	Oct 2, 2013
Priority date	Feb 28, 2011
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH 3 Cl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
(a) supplying monochlorosilane gas from one or more nozzles to a substrate disposed in a processing chamber;
(b) supplying a hydrogen-containing gas plasma-excited by one or more excitation units from each of the one or more excitation units to the substrate disposed in the processing chamber;
(c) supplying a nitrogen-containing gas plasma-excited or heat-excited by one or more excitation units from each of the one or more excitation units to the substrate disposed in the processing chamber;
(d) supplying at least one selected from the group consisting of a N 2 gas plasma-excited by one or more excitation units and a rare gas plasma-excited by one or more excitation units from each of the one or more excitation units to the substrate disposed in the processing chamber; and
(e) performing a cycle comprising the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.

2. The method according to claim 1 , wherein the step (b) is performed during one of a period after the step (a) and a period after the step (c), and the step (d) is performed during one of the period after the step (a) and the period after the step (c) other than the one of the periods where the step (b) is performed.

3. The method according to claim 1 , wherein the step (b) is performed during one of a period where the nitrogen-containing gas is not supplied after the step (a) and a period where the monochlorosilane gas is not supplied after the step (c), and the step (d) is performed during one of the period where the nitrogen-containing gas is not supplied after the step (a) and the period where the monochlorosilane gas is not supplied after the step (c) other than the one of the periods where the step (b) is performed.

4. The method according to claim 1 , wherein the step (b) is performed during one of a period after the step (a) and before the step (c) and a period after the step (c) and before the step (a), and the step (d) is performed during one of the period after the step (a) and before the step (c) and the period after the step (c) and before the step (a) other than the one of the periods where the step (b) is performed.

5. The method according to claim 1 , wherein the step (a) comprises forming a silicon-containing layer on the substrate, the step (b) comprises subjecting the silicon-containing layer to a first modification process, the step (c) comprises changing the silicon-containing layer subjected to the first modification process into a silicon nitride layer, and the step (d) comprises subjecting the silicon nitride layer to a second modification process.

6. The method according to claim 1 , wherein the step (a) comprises forming a silicon-containing layer on the substrate, the step (d) comprises subjecting the silicon-containing layer to a first modification process, the step (c) comprises changing the silicon-containing layer subjected to the first modification process into a silicon nitride layer, and the step (b) comprises subjecting the silicon nitride layer to a second modification process.

7. The method according to claim 1 , wherein the step (a) comprises forming a silicon-containing layer on the substrate, the step (c) comprises changing the silicon-containing layer into a silicon nitride layer, the step (b) comprises subjecting the silicon nitride layer to a first modification process, the step (d) comprises subjecting the silicon nitride layer to a second modification process.

8. The method according to claim 1 , wherein the step (c) comprises supplying the nitrogen-containing gas plasma-excited by one or more excitation units from each of the one or more excitation units to the substrate disposed in the processing chamber.

9. The method according to claim 1 , wherein the step (a) comprises supplying the monochlorosilane gas from each of a plurality of nozzles to the substrate disposed in the processing chamber.

10. The method according to claim 1 , wherein the step (b) comprises supplying the hydrogen-containing gas plasma-excited by a plurality of excitation units from each of the plurality of excitation units to the substrate disposed in the processing chamber.

11. The method according to claim 1 , wherein the step (d) comprises supplying at least one selected from the group consisting of the nitrogen gas and the rare gas plasma-excited by a plurality of excitation units from each of the plurality of excitation units to the substrate disposed in the processing chamber.

12. The method according to claim 1 , wherein the step (c) comprises supplying the nitrogen-containing gas plasma-excited or heat-excited by a plurality of excitation units from each of the plurality of excitation units to the substrate disposed in the processing chamber.

13. The method according to claim 1 , wherein the step (e) is performed with the substrate being at a temperature ranging from 250° C. to 630° C.

14. The method according to claim 1 , wherein the step (e) is performed with the substrate being at a temperature ranging from 300° C. to 500° C.

15. The method according to claim 1 , wherein the step (e) is performed with the substrate rotated.

16. The method according to claim 1 , wherein the nitrogen-containing gas includes ammonia gas, the hydrogen-containing gas includes hydrogen gas, and the rare gas includes at least one of argon gas and helium gas.

17. A method of manufacturing a semiconductor device, comprising:
(a) supplying monochlorosilane gas from one or more nozzles to a substrate disposed in a processing chamber;
(b) supplying a hydrogen-containing gas plasma-excited by one or more excitation units from each of the one or more excitation units to the substrate disposed in the processing chamber;
(c) supplying a nitrogen-containing gas plasma-excited by one or more excitation units from each of the one or more excitation units to the substrate disposed in the processing chamber;
(d) supplying at least one selected from the group consisting of a N 2 gas plasma-excited by one or more excitation units and a rare gas plasma-excited by one or more excitation units from each of the one or more excitation units to the substrate disposed in the processing chamber; and
(e) performing a cycle comprising the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.

18. A substrate processing apparatus comprising:
a processing chamber configured to accommodate a substrate;
a first gas supply system configured to supply monochlorosilane gas from one or more nozzles to a substrate accommodated in the processing chamber;
a second gas supply system configured to supply a nitrogen-containing gas to a substrate accommodated in the processing chamber;
a third gas supply system configured to supply a hydrogen-containing gas to a substrate accommodated in the processing chamber;
a fourth gas supply system configured to supply at least one selected from the group consisting of a N 2 gas and a rare gas to a substrate accommodated in the processing chamber;
one or more excitation units configured to plasma-excite or heat-excite a gas; and
a controller configured to control the first gas supply system, the second gas supply system, the third gas supply system, the fourth gas supply system and the excitation unit to perform a cycle comprising supplying the monochlorosilane gas from the one or more nozzles to a substrate accommodated in the processing chamber, supplying the hydrogen-containing gas plasma-excited by one

Assignees

• Hitachi Int Electric Inc

Inventors

• Hirose Yoshiro
• Sano Atsushi
• Okuda Kazuyuki
• Maeda Kiyohiko

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title