Composite member including substrate made of composite material

Patent metadata

Field	Value
Publication number	US-9347120-B2
Application number	US-201214000247-A
Country	US
Kind code	B2
Filing date	Feb 20, 2012
Priority date	Mar 22, 2011
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

A composite member has a substrate made of a composite material having SiC combined with magnesium or a magnesium alloy, and has a warpage degree of not less than 0.01×10 −3 and not more than 10×10 −3 , the warpage degree being defined as lmax/Dmax, where lmax being a difference between a maximum value and a minimum value of surface displacement of one surface of composite member measured along a longest side thereof, and Dmax being a length of the longest side. Thereby, a composite member capable of efficiently dissipating heat to an installation object, a heat-dissipating member using the composite member, and a semiconductor device having the heat-dissipating member are provided.

First claim

The invention claimed is:

1. A composite member, comprising
a substrate made of a composite material having SiC combined with pure magnesium containing not less than 99.8% by mass of Mg and an impurity, or a magnesium alloy composed of an additive element and the remainder containing Mg and an impurity, the total content of the additive element is not more than 20% by mass when the entire alloy is set as 100% by mass,
the composite member satisfying a warpage degree of not less than 0.01×10 −3 and not more than 2.0×10 −3 , said warpage degree being defined as a ratio of Imax to Dmax (Imax/Dmax), where Imax being a difference between a maximum value and a minimum value of surface displacement of one surface of said composite member measured along a longest side thereof, and Dmax being a length of said longest side,
the composite member further comprises a metal coating layer on at least a portion of said substrate, and
said metal coating layer has a concavely curved shape in which a thickness of said metal coating layer is thinnest at a central portion and becomes thick toward each edge portion, in a cross section in a thickness direction of said composite member.

2. The composite member according to claim 1 , wherein said substrate has a SiC content of not less than 50% by volume and not more than 90% by volume.

3. The composite member according to claim 1 , wherein said substrate has a thermal expansion coefficient of not less than 4 ppm/K and not more than 15 ppm/K, and a thermal conductivity of not less than 180 W/m·K.

4. A heat-dissipating member composed of a composite member as recited in claim 1 .

5. A semiconductor device, comprising a heat-dissipating member as recited in claim 4 , and a semiconductor element mounted on the heat-dissipating member.

Assignees

• Iwayama Isao
• Nishikawa Taichiro
• Ikeda Toshiya
• Koyama Shigeki
• Sumitomo Electric Industreis Ltd
• Almt Corp

Inventors

• Iwayama Isao
• Nishikawa Taichiro
• Ikeda Toshiya
• Koyama Shigeki

Classifications

• H10W70/692

  Ceramics or glasses · CPC title

• H10W40/259

  Ceramics or glasses (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

• H10W40/258

  Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W40/00

  Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title