Titania-doped quartz glass and making method

US9346700B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9346700-B2
Application numberUS-201213569429-A
CountryUS
Kind codeB2
Filing dateAug 8, 2012
Priority dateAug 18, 2011
Publication dateMay 24, 2016
Grant dateMay 24, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Titania-doped quartz glass is manufactured by mixing a silicon-providing reactant gas and a titanium-providing reactant gas, preheating the reactant gas mixture at 200-400° C., and subjecting the mixture to oxidation or flame hydrolysis. A substrate of the glass is free of concave defects having a volume of at least 30,000 nm 3 in an effective region of the EUV light-reflecting surface and is suited for use in the EUV lithography.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for manufacturing a titania-doped quartz glass, comprising the steps of: mixing a silicon-providing reactant gas and a titanium-providing reactant gas, heating the reactant gas mixture at 200 to 400° C., subjecting the mixture to oxidation or flame hydrolysis with the aid of a combustible gas and a combustion-supporting gas, depositing a titania doped quartz glass, and forming an EUV lithography member having a surface for reflecting EUV light, the surface being free of concave defects having a volume of at least 30,000 nm 3 and an aspect ratio of up to 10 in an effective region. 2. The method of claim 1 , wherein the step of subjecting the mixture to oxidation or flame hydrolysis is performed by a burner for injecting the reactant gas mixture, the combustible gas, and the combustion-supporting gas, the burner including a central tube for injecting the reactant gas mixture, a glass or glass-lined conduit being connected at its downstream end to the central tube for feeding the reactant gas mixture through the glass or glass-lined conduit to the central tube, and the step of heating the reactant gas mixture is performed in the glass or glass-lined conduit. 3. The method of claim 2 , wherein a metal conduit is connected to the glass or glass-lined conduit at its upstream end, and an upstream end portion of the glass or glass-lined conduit connected to the metal conduit is held at 100 to 130° C. 4. The method of claim 1 , wherein the burner comprises a central multi-fold tube section and a multi-nozzle section, the central multi-fold tube section including the central tube and a second tube enclosing the central tube, and the reactant gas mixture is injected through the central tube, and the combustion-supporting gas is injected through the second tube while being heated at 200 to 400° C. 5. The method of claim 1 , wherein the silicon-providing reactant gas is selected from the group consisting of silicon tetrachloride, dimethyldichlorosilane, methyltrichlorosilane, tetramethoxysilane, tetraethoxysilane, and methyltrimethoxysilane, and the titanium-providing reactant gas is selected from the group consisting of titanium tetrachloride, titanium tetrabromide, tetraethoxytitanium, tetraisopropoxytitanium, tetra-n-propoxytitanium, tetra-n-butoxytitanium, tetra-sec-butoxytitanium, and tetra-t-butoxytitanium. 6. A method for manufacturing a titania-doped quartz glass, comprising the steps of: mixing a silicon-providing reactant gas and a titanium-providing reactant gas, heating the reactant gas mixture at 300 to 400° C., subjecting the mixture to oxidation or flame hydrolysis with the aid of a combustible gas and a combustion-supporting gas, depositing a titania doped quartz glass, and forming an EUV lithography member having a surface for reflecting EUV light, the surface being free of concave defects having a volume of at least 15,000 nm 3 and an aspect ratio of up to 10 in an effective region, wherein the step of subjecting the mixture to oxidation or flame hydrolysis is performed by a burner for injecting the reactant gas mixture, the combustible gas, and the combustion-supporting gas, the burner including a central tube for injecting the reactant gas mixture, a glass or glass-lined conduit being connected at its downstream end to the central tube for feeding the reactant gas mixture through the glass or glass-lined conduit to the central tube, the step of heating the reactant gas mixture being performed in the glass or glass-lined conduit at 300 to 400° C., and a metal conduit is connected to the glass or glass-lined conduit at its upstream, the upstream end portion of the glass or glass-lined conduit connected to the metal conduit being held at 100 to 130° C.

Assignees

Inventors

Classifications

  • Constructional details of the feed line, e.g. heating, insulation, material, manifolds, filters · CPC title

  • with more than 90% silica by weight, e.g. quartz {(C03C3/045 takes precedence)} · CPC title

  • containing titanium · CPC title

  • Specific substances in specified ports, e.g. all gas flows specified · CPC title

  • Manufacture or treatment of nanostructures · CPC title

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What does patent US9346700B2 cover?
Titania-doped quartz glass is manufactured by mixing a silicon-providing reactant gas and a titanium-providing reactant gas, preheating the reactant gas mixture at 200-400° C., and subjecting the mixture to oxidation or flame hydrolysis. A substrate of the glass is free of concave defects having a volume of at least 30,000 nm 3 in an effective region of the EUV light-reflecting surface and is …
Who is the assignee on this patent?
Maida Shigeru, Otsuka Hisatoshi, Shinetsu Chemical Co
What technology area does this patent fall under?
Primary CPC classification G03F1/24. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 24 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).