Systems, devices and methods related to improved radio-frequency modules

Patent metadata

Field	Value
Publication number	US-9344140-B2
Application number	US-201514630236-A
Country	US
Kind code	B2
Filing date	Feb 24, 2015
Priority date	Feb 25, 2014
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

Systems, devices and methods related to improved radio-frequency (RF) modules. In some embodiments, an RF module can include a packaging substrate, a power amplifier (PA) assembly implemented on a first die mounted on the packaging substrate, and a controller circuit implemented on a second die mounted on the first die. The controller circuit can be configured to provide at least some control of the PA assembly. The RF module can further include one or more output matching network (OMN) devices mounted on the packaging substrate and configured to provide output matching functionality for the PA assembly. The RF module can further include a band selection switch device mounted on each OMN device.

First claim

What is claimed is:

1. A radio-frequency (RF) module comprising:
a packaging substrate configured to receive a plurality of components;
a power amplifier (PA) assembly implemented on a first die mounted on the packaging substrate;
a controller circuit implemented on a second die mounted on the first die, the controller circuit configured to provide at least some control of the PA assembly;
one or more output matching network (OMN) devices mounted on the packaging substrate and configured to provide output matching functionality for the PA assembly; and
a band selection switch device mounted on each OMN device.

2. The RF module of claim 1 wherein the first die is a gallium arsenide (GaAs) die configured for implementation of a plurality of heterojunction bipolar transistor (HBT) PAs.

3. The RF module of claim 2 wherein the HBT PAs include a plurality of PAs configured for 3G/4G operation.

4. The RF module of claim 3 wherein the HBT PAs further include a plurality of PAs configured for 2G operation.

5. The RF module of claim 2 wherein the second die is a silicon (Si) die.

6. The RF module of claim 5 wherein the controller circuit includes control functionality for either or both of 3G/4G operation and 2G operation.

7. The RF module of claim 5 wherein the GaAs die and the Si die are interconnected by a plurality of wirebonds.

8. The RF module of claim 5 wherein the Si die and the packaging substrate are interconnected by a plurality of wirebonds.

9. The RF module of claim 1 wherein the one or more OMN devices includes a first OMN device configured for 3G/4G operation and implemented as an integrated passive device (IPD) in a flip-chip configuration.

10. The RF module of claim 9 wherein the band selection switch device is implemented on a silicon-on-insulator (SOI) die.

11. The RF module of claim 10 wherein the band selection switch die and the packaging substrate are interconnected by a plurality of wirebonds.

12. The RF module of claim 9 further comprising a tuning circuit implemented on the IPD flip-chip device.

13. The RF module of claim 12 wherein the tuning circuit is implemented as an IPD.

14. The RF module of claim 9 wherein the controller circuit on the second die and the band selection switch die are interconnected by one or more flying wirebonds.

15. The RF module of claim 1 wherein the packaging substrate includes a laminate packaging substrate.

16. The RF module of claim 15 wherein the laminate packaging substrate includes a first number of laminate layers, the first number less than a second number of laminate layers associated with a module without the one or more OMN devices.

17. The RF module of claim 1 further comprising a plurality of filter-based devices mounted on the packaging substrate.

18. The RF module of claim 17 wherein at least some of the filter-based devices are configured to facilitate RF shielding between a first region and a second region on the packaging substrate.

19. A method for fabricating a radio-frequency (RF) module, the method comprising:
providing or forming a packaging substrate configured to receive a plurality of components;
mounting a power amplifier (PA) die on the packaging substrate;
stacking a controller circuit die on the PA die;
mounting one or more output matching network (OMN) devices on the packaging substrate; and
stacking a band selection switch on each OMN device.

20. A wireless device comprising:
a transceiver configured to generate a radio-frequency (RF) signal;
a front-end module (FEM) in communication with the transceiver, the FEM including a packaging substrate configured to receive a plurality of components, the FEM further including a power amplifier (PA) assembly implemented on a first die mounted on the packaging substrate, the PA assembly configured to amplify the RF signal, the FEM further including a controller circuit implemented on a second die mounted on the first die, the controller circuit configured to provide at least some control of the PA assembly, the FEM further including one or more output matching network (OMN) devices mounted on the packaging substrate and configured to provide output matching functionality for the PA assembly, the FEM further including a band selection switch device mounted on each OMN device; and
an antenna in communication with the FEM and configured to transmit the amplified RF signal.

Assignees

• Skyworks Solutions Inc

Inventors

• Reisner Russ Alan
• King Joel Richard
• Alon Ziv
• Kwan Tin Wai
• Lyalin Aleksey A
• Xu Xiaodong

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/752

  between stacked chips · CPC title

• H10W90/732

  between stacked chips · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title