Laser diode with high efficiency

Patent metadata

Field	Value
Publication number	US-9343873-B2
Application number	US-201113823277-A
Country	US
Kind code	B2
Filing date	Sep 12, 2011
Priority date	Sep 14, 2010
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time.
For this purpose, the active layer ( 10 ), the first cladding layer ( 14 ), the first waveguide layer ( 12 ), the second waveguide layer ( 16 ), and the second cladding layer ( 18 ) should be designed such that 0.01 μm≦d wL ≦1.0 μm and Δn≧0.04, where d wL is the sum total of the layer thickness of the first waveguide layer ( 12 ), the layer thickness of the active layer ( 10 ), and the layer thickness of the second waveguide layer ( 16 ) and Δn is a maximum of the refractive index difference between the first cladding layer ( 14 ) and the first waveguide layer ( 12 ) and the refractive index difference between the second waveguide layer ( 16 ) and the second cladding layer ( 18 ).

First claim

The invention claimed is:

1. An optoelectronic semiconductor component, comprising:
an active layer that is suitable for generating radiation, a first waveguide layer positioned on a first side of the active layer, a first cladding layer positioned on the first waveguide layer, a second waveguide layer positioned on a second side of the active layer, and a second cladding layer positioned on the second waveguide layer, wherein the first side and the second side are opposite with respect to the active layer, wherein a reflection facet for reflecting the radiation emitted by the active layer and an emission facet for reflection and feed-out of the radiation emitted by the active layer, wherein the reflection facet and the emission facet are each positioned in the marginal area of the active layer, and wherein the reflection facet and the emission facet are positioned opposite one another with respect to the active layer, wherein:
the conditions (i) and (ii) are met:
(i) the active layer, the first cladding layer, the first waveguide layer, the second waveguide layer, and the second cladding layer are designed such that
the conditions
0.01 μm≦dwL≦1.0 μm and Δn≧0.04;
are met;
where dwL is the sum total of the layer thickness of the first waveguide layer, the layer thickness of the active layer, and the layer thickness of the second waveguide layer, and Δn is a maximum of the refractive index difference between the first waveguide layer and the first cladding layer and the refractive index difference between the second waveguide layer and the second cladding layer,
and
(ii) the semiconductor component comprises a ridge waveguide with an effective index step Δneff>0.1.

2. The semiconductor component according to claim 1 , wherein:
the first waveguide layer, the active layer and the second waveguide layer are designed such that the ratio between the layer thickness of the second waveguide layer on the one hand and the sum total of the layer thickness of the first waveguide layer, the layer thickness of the active layer, and the layer thickness of the second waveguide layer on the other is greater than 0.65.

3. The semiconductor component according to claim 1 , wherein:
the first cladding layer, the first waveguide layer, the second waveguide layer, and the second cladding layer are designed such that the condition Δn>0.15 is met.

4. The semiconductor component according to claim 3 , wherein:
the first cladding layer, the first waveguide layer, the second waveguide layer, and the second cladding layer are designed such that the condition Δn>0.30 is met.

5. The semiconductor component according to claim 1 , wherein:
the first waveguide layer, the active layer, and the second waveguide layer are designed such that the condition
0.01 μm≦dwL≦0.75 μm is met.

6. The semiconductor component according to claim 5 , wherein:
the first waveguide layer, the active layer, and the second waveguide layer are designed such that the condition
0.01 μm≦dwL≦0.5 μm is met.

7. The semiconductor component according to claim 1 , wherein:
the active layer extends across the entire region between the reflection facet and the emission facet, wherein the active layer is in direct contact with the reflection facet and the emission facet.

8. The semiconductor component according to claim 1 , wherein:
the first waveguide layer, the active layer and the second waveguide layer are designed such that the ratio between the layer thickness of the second waveguide layer on the one hand and the sum total of the layer thickness of the first waveguide layer, the layer thickness of the active layer, and the layer thickness of the second waveguide layer on the other is greater than 0.85.

9. The semiconductor component according to claim 1 , wherein:
the ridge waveguide is formed by grooves that are introduced into the second waveguide layer and the second cladding layer, wherein the depth of the grooves is such that a minimum distance between the side of the active layer facing the second waveguide layer and the side of the grooves facing the active layer is greater than 100 nm.

10. The semiconductor component according to claim 9 , wherein:
a maximum distance between the side of the active layer facing the second waveguide layer and the side of the grooves facing the active layer is smaller than 500 nm.

11. The semiconductor component according to claim 10 , wherein:
a maximum distance between the side of the active layer facing the second waveguide layer and the side of the grooves facing the active layer is smaller than 250 nm.

12. The semiconductor component according to claim 1 , wherein:
the ridge waveguide is less than 20 μm in width, preferably less than 10 μm.

13. The semiconductor component according to claim 1 , wherein:
the first cladding layer and the first waveguide layer are n-type, the second waveguide layer and the second cladding layer are p-type.

14. The semiconductor component according to claim 1 , wherein:
the component comprises neither a diffuser nor a concave lens.

Assignees

• Crump Paul
• Erbert Goetz
• Wenzel Hans
• Forschungsverbund Berlin Ev

Inventors

• Crump Paul
• Erbert Goetz
• Wenzel Hans

Classifications

• A61B18/203

  applying laser energy to the outside of the body · CPC title

• H01S5/20 Primary

  Structure or shape of the semiconductor body to guide the optical wave {; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers} · CPC title

• A61B2019/409

  Human Necessities · mapped topic

• A61B2018/00476

  Hair follicles · CPC title

• H01S5/22 Primary

  having a ridge or stripe structure · CPC title