Method of producing aperture member

Patent metadata

Field	Value
Publication number	US-9343323-B2
Application number	US-201514732001-A
Country	US
Kind code	B2
Filing date	Jun 5, 2015
Priority date	Aug 22, 2014
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

In one embodiment, an aperture member producing method includes applying a charged particle beam to a plurality of chip areas on a first substrate while changing a writing condition to write a first pattern corresponding to an aperture opening, processing the first substrate based on the written first pattern to form a second pattern, cutting out a chip area provided with the second pattern having desired accuracy from the first substrate to produce a template, allowing the template to come into contact with a resist overlying a front surface of a second substrate, separating the template from the hardened resist to pattern the resist with a transfer pattern, processing the second substrate using the transfer pattern as a mask to form a first recess, and etching a rear surface of the second substrate to form a second recess communicating with the first recess.

First claim

What is claimed is:

1. A method of producing an aperture member for a charged particle beam apparatus, the method comprising:
applying a charged particle beam to a plurality of chip areas on a first substrate while changing a writing condition to write a first pattern corresponding to an aperture opening in each chip area;
processing the first substrate based on the written first pattern to form a second pattern;
measuring dimensional accuracy and edge positional accuracy of the second pattern in each chip area;
cutting out a chip area provided with the second pattern having desired dimensional accuracy and desired edge positional accuracy from the first substrate to produce a template;
allowing a template pattern of the template including the second pattern to come into contact with a resist overlying a front surface of a second substrate;
hardening the resist;
separating the template from the hardened resist to pattern the resist with a transfer pattern corresponding to the template pattern;
processing the second substrate using the transfer pattern as a mask to form a first recess in the front surface; and
etching a rear surface of the second substrate to form a second recess communicating with the first recess such that an opening extending through the second substrate is formed.

2. The method according to claim 1 , wherein the first pattern is written while changing an assist pattern for each chip area.

3. The method according to claim 1 , wherein the first pattern is written such that pattern edge part of the first pattern is given a higher dose than pattern central part thereof.

4. The method according to claim 3 , wherein the first pattern is written while changing the dose to the pattern edge part for each chip area.

5. The method according to claim 1 , wherein the aperture opening is shaped in an octagon including a hexagonal portion and a rectangular portion connecting to the hexagonal portion.

6. A method of producing an aperture member for a charged particle beam apparatus, the method comprising:
applying a charged particle beam to a plurality of chip areas on a first substrate while changing a writing condition to write a first pattern corresponding to an aperture opening in each chip area;
processing the first substrate based on the written first pattern to form a second pattern;
measuring dimensional accuracy and edge positional accuracy of the second pattern in each chip area;
cutting out a chip area provided with the second pattern having desired dimensional accuracy and desired edge positional accuracy from the first substrate to produce a template;
etching a rear surface of a second substrate to form a first recess;
filling the first recess with a filler;
allowing a template pattern of the template including the second pattern to come into contact with a resist overlying a front surface of the second substrate;
hardening the resist;
separating the template from the hardened resist to pattern the resist with a transfer pattern corresponding to the template pattern;
processing the second substrate using the transfer pattern as a mask to form a second recess through which the filler is exposed; and
removing the filler such that the first recess communicates with the second recess to form an opening extending through the second substrate.

7. The method according to claim 6 , wherein the first pattern is written while changing an assist pattern for each chip area.

8. The method according to claim 6 , wherein the first pattern is written such that pattern edge part of the first pattern is given a higher dose than pattern central part thereof.

9. The method according to claim 8 , wherein the first pattern is written while changing the dose to the pattern edge part for each chip area.

10. The method according to claim 6 , wherein the aperture opening is shaped in an octagon including a hexagonal portion and a rectangular portion connecting to the hexagonal portion.

11. A method of producing an aperture member for a charged particle beam apparatus, the method comprising:
applying a charged particle beam to a plurality of chip areas on a first substrate while changing a writing condition to write a first pattern corresponding to an aperture opening in each chip area;
processing the first substrate based on the written first pattern to form a second pattern;
measuring dimensional accuracy and edge positional accuracy of the second pattern in each chip area;
cutting out a chip area provided with the second pattern having desired dimensional accuracy and desired edge positional accuracy from the first substrate to produce a template;
etching a rear surface of a second substrate to form a recess;
applying a resist to the recess;
allowing a template pattern of the template including the second pattern to come into contact with the resist;
hardening the resist;
separating the template from the hardened resist to pattern the resist with a transfer pattern corresponding to the template pattern; and
processing the second substrate using the transfer pattern as a mask to form an opening extending through the second substrate.

12. The method according to claim 11 , wherein the first pattern is written while changing an assist pattern for each chip area.

13. The method according to claim 11 , wherein the first pattern is written such that pattern edge part of the first pattern is given a higher dose than pattern central part thereof.

14. The method according to claim 13 , wherein the first pattern is written while changing the dose to the pattern edge part for each chip area.

15. The method according to claim 11 , wherein the aperture opening is shaped in an octagon including a hexagonal portion and a rectangular portion connecting to the hexagonal portion.

16. The method according to claim 11 ,
wherein the template includes a base, a first protrusion on the base, and a second protrusion on the first protrusion, and
wherein the second protrusion corresponds to the second pattern.

17. The method according to claim 16 , wherein the first protrusion has a height greater than a depth of the recess.

Assignees

• Nuflare Technology Inc

Inventors

• Kamikubo Takashi

Classifications

• H01J37/3174

  Particle-beam lithography, e.g. electron beam lithography · CPC title

• H01J2237/31776

  Shaped beam · CPC title

• H01J2237/0451

  with fixed aperture · CPC title

• H01J37/09 Primary

  Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields · CPC title

• H10D86/01 Primary

  Manufacture or treatment · CPC title