Vertical metal insulator metal capacitor

Patent metadata

Field	Value
Publication number	US-9343237-B2
Application number	US-201514600777-A
Country	US
Kind code	B2
Filing date	Jan 20, 2015
Priority date	Nov 10, 2009
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

A capacitor structure includes at least two capacitors. A first electrode includes a bottom conductive plane and first vertical conductive structures. The bottom conductive plane is disposed over a substrate. The bottom conductive plane has a first area and a first shape. At least two second electrodes include top conductive planes and second vertical conductive structures. A combined area of the top conductive planes and a gap area between adjacent top conductive planes has a second area and a second shape. The first area and the second area are about the same and the first shape and the second shape are about the same. An insulating structure is disposed between the first electrode and the second electrodes. The first vertical conductive structures and the second vertical conductive structures are interlaced with each other. The capacitors share the bottom conductive plane and have separate top conductive planes.

First claim

What is claimed is:

1. A capacitor structure including at least two capacitors, comprising:
a first electrode including a bottom conductive plane and a plurality of first vertical conductive structures on the bottom conductive plane, the bottom conductive plane being disposed over a substrate, wherein the bottom conductive plane has a first area and a first shape;
at least two second electrodes including at least two top conductive planes and a plurality of second vertical conductive structures under the at least two top conductive planes, wherein a combined area of the at least two top conductive planes and a gap area between adjacent top conductive planes of the at least two top conductive planes has a second area and a second shape, the first area and the second area are about the same and the first shape and the second shape are about the same; and
an insulating structure between the first electrode and the at least two second electrodes,
wherein the plurality of first vertical conductive structures and the plurality of second vertical conductive structures are interlaced with each other, and the at least two capacitors share the bottom conductive plane and have separate top conductive planes.

2. The capacitor structure of claim 1 , wherein the plurality of first vertical conductive structures comprise a plurality of first metal layers and a plurality of first via layers alternating with each other, and the plurality of second vertical conductive structures comprise a plurality of second metal layers and a plurality of second via layers alternating with each other.

3. The capacitor structure of claim 1 , wherein the insulating structure includes a plurality of inter-metal dielectric layers.

4. The capacitor structure of claim 1 , wherein the plurality of first vertical conductive structures and the plurality of second vertical conductive structures have at least one cross-sectional shape selected from the group consisting of a square shape, a rectangular shape, a circular shape, and an oval shape.

5. The capacitor structure of claim 1 , wherein the plurality of first vertical conductive structures are distributed uniformly on the bottom conductive plane, and the plurality of second vertical conductive structures are distributed uniformly under the at least two top conductive planes.

6. The capacitor structure of claim 1 , wherein the plurality of first vertical conductive structures are distributed in a square grid pattern on the bottom conductive plane, and the plurality of second vertical conductive structures are distributed in a square grid pattern under the at least two top conductive planes.

7. The capacitor structure of claim 1 , wherein a portion of the insulating structure is positioned between the first vertical conductive structures and the second vertical conductive structures, the insulating structure comprises another portion different from the portion between the first vertical conductive structures and the second vertical conductive structures, the portion between the first vertical conductive structures and the second vertical conductive structures comprises a material having a dielectric constant value greater than a dielectric constant value of the another portion of the insulating structure.

8. A method of forming a capacitor structure, comprising:
forming a first electrode over a substrate, wherein the first electrode includes a bottom conductive plane and a plurality of first vertical conductive structures on the bottom conductive plane, and the bottom conductive plane has a first area and a first shape;
forming an insulating structure over the first electrode; and
forming at least two second electrodes over the insulating structure, wherein the at least two second electrodes include at least two top conductive planes and a plurality of second vertical conductive structures under the at least two top conductive planes, wherein a combined area of the at least two top conductive planes and a gap area between adjacent top conductive planes of the at least two top conductive planes has a second area and a second shape, the first area and the second area are about the same and the first shape and the second shape are about the same, and the plurality of first vertical conductive structures and the plurality of second vertical conductive structures are interlaced with each other.

9. The method of claim 8 , wherein forming the first electrode comprises:
forming the bottom conductive plane over the substrate;
forming at least one first opening in a first dielectric layer of the insulating structure; and
depositing a first metal layer in the at least one first opening for forming at least a portion of the plurality of first vertical conductive structures.

10. The method of claim 9 , wherein forming the first electrode further comprises performing a chemical mechanical planarization to the first metal layer.

11. The method of claim 9 , wherein forming the at least two second electrodes comprises:
forming at least one second opening in a second dielectric layer of the insulating structure;
depositing a second metal layer in the at least one second opening for forming at least a portion of the plurality of second vertical conductive structures; and
forming the at least two top conductive planes over the plurality of second vertical conductive structures.

12. The method of claim 11 , wherein forming the at least two second electrodes further comprises performing a chemical mechanical planarization to the second metal layer.

13. The method of claim 11 , further comprising:
depositing a third dielectric layer between the first dielectric layer and the second dielectric layer;
forming at least one third opening in the third dielectric layer; and
depositing a third metal layer in the at least one third opening for forming at least portions of both the plurality of first vertical conductive structures and the plurality of second vertical conductive structures.

14. The method of claim 13 , further comprising performing a chemical mechanical planarization to the third metal layer.

15. The method of claim 8 , wherein the plurality of first vertical conductive structures and the plurality of second vertical conductive structures have at least one cross-sectional shape selected from the group consisting of a square shape, a rectangular shape, a circular shape, and an oval shape.

16. The method of claim 8 , wherein the plurality of first vertical conductive structures are distributed in a square grid pattern on the bottom conductive plane, and the plurality of second vertical conductive structures are distributed in a square grid pattern under the at least two top conductive planes.

17. A capacitor structure including at least two capacitors, comprising:
at least two first electrodes including at least two bottom conductive planes and a plurality of first vertical conductive structures, the bottom conductive plane being disposed over a substrate, wherein a combined area of the at least two bottom conductive planes and a gap area between adjacent bottom conductive planes of the at least two bottom conductive planes has a first area and a first shape;
a second electrode including a top conductive plane and a plurality of second vertical conductive structures under the top conductive plane, wherein the top conductive plane has a second area and a second shape, the first area and the second area are about the same and the first shape and the second shape are about the same; and
an insulating structure between the at least two first electrodes and the second electrode,

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Cho Lan-Chou
• Jou Chewn-Pu

Classifications

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H10D84/212

  of only capacitors · CPC title

• H10D1/692

  Electrodes · CPC title

• H01G4/005

  Electrodes · CPC title

• H01L2924/00

  Electricity · mapped topic