Magnetoelectric material and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9340902-B2
Application number	US-201314083160-A
Country	US
Kind code	B2
Filing date	Nov 18, 2013
Priority date	Nov 16, 2012
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

The present invention provides a magnetoelectric material in which an electric property is capable of being controlled by a magnetic field or a magnetic property is capable of being controlled by an electric field, and a method of manufacturing the same. Particularly, the present invention provides a magnetoelectric material in which a distance between magnetic ions interacting with each other is controlled by using non-magnetic ions or alkaline earth metal ions, and a method of manufacturing the same.

First claim

What is claimed is:

1. A magnetoelectric material which is a Y-type or Z-type hexaferrite material comprising:
non-magnetic ions corresponding to aluminum (Al) ions or gallium (Ga) ions;
metal ions including first ions and second ions, the first ions corresponding to barium (Ba), the second ions corresponding to at least one of strontium (Sr) ions, calcium (Ca) ions, scandium (Sc) ions, yttrium (Y) ions, gadolinium (Gd) ions, terbium (Tb) ions, dysprosium (Dy) ions, holmium (Ho) ions, erbium (Er) ions, thulium (Tm) ions, ytterbium (Yb) ions, and lutetium (Lu) ions;
improvement ions increasing a resistance value and a degree of magnetic arrangement at a normal temperature, the improvement ions corresponding to at least one of manganese (Mn) ions, cobalt (Co) ions, nickel (Ni) ions, copper (Cu) ions, magnesium (Mg) ions, and zinc (Zn) ions; and
magnetic ions interacting with each other and corresponding to iron (Fe) ions,
wherein a distance between the magnetic ions is controlled by the non-magnetic ions or the metal ions.

2. The magnetoelectric material of claim 1 , wherein the magnetoelectric material is a single crystal in which a magnetic property is controlled by an electric field at the normal temperature.

3. The magnetoelectric material of claim 1 , wherein the distance between the magnetic ions is controlled by positioning a corresponding non-magnetic ion between adjacent magnetic ions, or the distance between the magnetic ions is controlled by substituting some of first ions by the second ions.

4. The magnetoelectric material of claim 1 , wherein the non-magnetic ions are substituted for a portion of the magnetic ions.

5. The magnetoelectric material of claim 1 , wherein a substitution ratio of the non-magnetic ions for the magnetic ions is more than 0% and less than 80%.

6. The magnetoelectric material of claim 1 , wherein the magnetoelectric material is manufactured by mixing barium carbonate including the Ba ions as the first ions, strontium carbonate including the Sr ions as the second ions, iron oxide including Fe ions as the magnetic ions, aluminum oxide including the Al ions as the non-magnetic ions, cobalt oxide including the Co ions as the improvement ions, and sodium oxide.

7. The magnetoelectric material of claim 6 , wherein the magnetoelectric material is manufactured by mixing the barium carbonate, the strontium carbonate, the iron oxide, the aluminum oxide, the cobalt oxide, and the sodium oxide according to respective molar ratios represented in the following Equation:
Molar ratio of the barium carbonate=A 1 (1 −x ′);

Molar ratio of the strontium carbonate=A 1 ( x′ );
Molar ratio of the cobalt oxide=A 2 ;
Molar ratio of the iron oxide=A 3 (1 −y );
Molar ratio of the aluminum oxide=A 3 y ; and
Molar ratio of the sodium oxide=A 4 ,  [Equation]

wherein 15≦A 1 ≦25, 15≦A 2 ≦25, 40≦A 3 ≦60, 5≦A 4 ≦10, A 1 +A 2 +A 3 +A 4 =100, 0<x′≦1.0, and 0<y≦0.8.

8. The magnetoelectric material of claim 6 , wherein the magnetoelectric material is manufactured as a crystal by:
mixing the barium carbonate, the strontium carbonate, the iron oxide, the aluminum oxide, the cobalt oxide, and the sodium oxide;
performing heat-treating at least one time; and
performing slow cooling.

9. The magnetoelectric material of claim 1 , wherein the distance between the magnetic ions is controlled by positioning a corresponding non-magnetic ion between adjacent magnetic ions.

10. A method of manufacturing a magnetoelectric material which is a Y-type or Z-type hexaferrite material, comprising:
mixing a first powder including magnetic ions that correspond to iron (Fe) ions, a second powder including non-magnetic ions that correspond to aluminum (Al) ions or gallium (Ga) ions, a third powder including metal ions, the metal ions including first ions and second ions, the first ions corresponding to barium (Ba), the second ions corresponding to at least one of strontium (Sr) ions, calcium (Ca) ions, scandium (Sc) ions, yttrium (Y) ions, gadolinium (Gd) ions, terbium (Tb) ions, dysprosium (Dy) ions, holmium (Ho) ions, erbium (Er) ions, thulium (Tm) ions, ytterbium (Yb) ions, and lutetium (Lu) ions, and a fourth powder including improvement ions, the improvement ions corresponding to at least one of manganese (Mn), cobalt (Co), nickel (Ni), copper (Cu), magnesium (Mg), and zinc (Zn);
heat-treating the mixed powders at least one time, wherein the heat-treating includes heating the mixed powders to a first temperature that is in a range from 1,100° C. to 1,500° C., maintaining the first temperature for a first time that is in a range from 5 hours to 30 hours, and cooling the mixed powders to a second temperature that is in a range from 900° C. to 1,200° C.; and
slowly cooling the heat-treated powders at least one time with a predetermined temperature decrease rate that is in a range from 0.1° C./h to 100° C./h to manufacture a crystal.

11. A magnetoelectric material which is a Y-type or Z-type hexaferrite material comprising:
non-magnetic ions corresponding to aluminum ions or gallium ions;
metal ions including first ions and second ions, the first ions corresponding to barium ions, the second ions corresponding to at least one of strontium (Sr) ions, calcium (Ca) ions, scandium (Sc) ions, yttrium (Y) ions, gadolinium (Gd) ions, terbium (Tb) ions, dysprosium (Dy) ions, holmium (Ho) ions, erbium (Er) ions, thulium (Tm) ions, ytterbium (Yb) ions, and lutetium (Lu) ions;
improvement ions increasing a resistance value and a degree of magnetic arrangement at a normal temperature, the improvement ions corresponding to at least one of manganese (Mn) ions, cobalt (Co) ions, nickel (Ni) ions, copper (Cu) ions, magnesium (Mg) ions, and zinc (Zn) ions; and
magnetic ions interacting with each other and corresponding to iron (Fe) ions,
wherein the non-magnetic ions or the second ions cause an electric property of the magnetoelectric material to be changed by applying a magnetic field or a magnetic property of the magnetoelectric material to be changed by applying an electric field.

Assignees

• Snu R&Db Foundation

Inventors

• Kim Kee Hoon
• Chun Sae Hwan
• Chai Yi Sheng
• Shin Kwang Woo

Classifications

• C01G51/82

  Compounds containing cobalt, with or without oxygen or hydrogen, and containing two or more other elements · CPC title

• C04B2235/767

  Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites · CPC title

• C04B2235/6567

  Treatment time · CPC title

• C04B2235/6565

  Cooling rate · CPC title

• C04B2235/3284

  Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof · CPC title