Manganese oxide thin film and oxide laminate

Patent metadata

Field	Value
Publication number	US-9166148-B2
Application number	US-201214365442-A
Country	US
Kind code	B2
Filing date	Dec 7, 2012
Priority date	Jan 20, 2012
Publication date	Oct 20, 2015
Grant date	Oct 20, 2015

Abstract

A manganese oxide thin film is formed on a plane of a substrate and has a composition RMnO 3 , where R is at least one and preferably two trivalent rare earth elements selected from lanthanoids, and where both R and Mn form the same atomic layer parallel to the plane of the substrate. An oxide laminate, includes the manganese oxide thin film; and at least one strongly-correlated oxide thin film that is contiguous to the manganese oxide thin film, wherein a total thickness, t, of the oxide laminate, a thickness, tm, of the manganese oxide thin film, and a thickness, t 1 , of the strongly-correlated oxide thin film satisfy a relation, relative to a critical thickness, tc, by which the strongly-correlated oxide thin film has a metallic phase, as follows: t=tm+t 1 >tc and t 1 <tc. Switching capabilities are ensured by a room temperature (Mott) phase transition.

First claim

The invention claimed is:

1. A manganese oxide thin film formed on a plane of a substrate, comprising:
a substrate; and
a manganese oxide thin film formed on a plane of the substrate and having a composition represented by composition formula RMnO 3 , where R consists of at least two trivalent rare earth elements selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy, and where both elements R and Mn form the same atomic layer parallel to the plane of th…

Assignees

• Fuji Electric Co Ltd

Inventors

• Ogimoto Yasushi

Classifications

• H10P14/3434

  Electricity · mapped topic

• H10P14/22

  Electricity · mapped topic

• H10P14/69397

  Electricity · mapped topic

• H10P14/6939

  Electricity · mapped topic

• H10P14/6329

  Electricity · mapped topic