Two mask process for electroplating metal employing a negative electrophoretic photoresist

Patent metadata

Field	Value
Publication number	US-9340892-B2
Application number	US-201213584326-A
Country	US
Kind code	B2
Filing date	Aug 13, 2012
Priority date	Aug 13, 2012
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

A negative electrophoretic photoresist is applied over a plurality of protruding disposable template portions on a substrate. A silo structure is placed on planar portions of the negative electrophoretic photoresist that laterally surround the plurality of protruding disposable template portions. The negative electrophoretic photoresist is lithographically exposed employing the silo structure and a first lithographic mask, which includes a transparent substrate with isolated opaque patterns thereupon. After removal of the silo structure, the negative electrophoretic photoresist is lithographically exposed employing a second lithographic mask, which includes a pattern of transparent areas overlying the planar portions of the negative electrophoretic photoresist less the areas for bases of metal structure to be subsequently formed by electroplating. The negative electrophoretic photoresist is developed to form cavities therein, and metal structures are formed by electroplating within the cavities. The negative electrophoretic photoresist and the plurality of protruding disposable template portions can be subsequently removed.

First claim

What is claimed is:

1. A method of forming three-dimensional metallic structures, said method comprising:
forming a plurality of protruding disposable template portions over a substrate;
applying a photoresist over said plurality of protruding disposable template portions, wherein said photoresist comprises a plurality of non-planar portions and a plurality of planar portions, wherein each of said plurality of non-planar portions overlies a respective protruding disposable template portion and each of said plurality of planar portions is between two adjacent non-planar portions;
forming a material block on said plurality of planar portions of said photoresist, wherein said material block defines a plurality of openings, wherein each of said plurality of openings overlies a respective non-planar portion of said photoresist to allow said respective non-planar portion to protrude into said each opening;
forming a first lithographic mask over said material block, wherein said first lithographic mask comprises a plurality of isolated opaque portions, wherein each isolated opaque portion overlies a respective non-planar portion of said photoresist that protrudes into a respective opening of the material block, wherein said first lithographic mask and said material block form a pattern-defining structure for said photoresist;
lithographically exposing said photoresist employing said first lithographic mask and said material block, wherein said exposing forms exposed photoresist portions and unexposed photoresist portions in said photoresist;
entirely removing said first lithographic mask and said material block;
forming a second lithographic mask over said photoresist and partially lithographically exposing said unexposed photoresist portions of said photoresist by employing said second lithographic mask;
developing said photoresist, wherein said developing of the photoresist removes the unexposed photoresist portions of said photoresist to form a plurality of cavities within said photoresist; and
forming three dimensional metallic structures by depositing at least one metallic material in said plurality of cavities.

2. The method of claim 1 , wherein said first lithographic mask further comprises a transparent substrate, wherein said plurality of isolated opaque portions is located on said transparent substrate.

3. The method of claim 2 , wherein said plurality of isolated opaque portions is a two-dimensional periodic array of portions.

4. The method of claim 3 , wherein said plurality of openings is a two-dimensional periodic array of openings having a same periodicity as said two-dimensional periodic array of portions.

5. The method of claim 3 , wherein said plurality of openings is a two-dimensional periodic array of openings having a same periodicity as said two-dimensional periodic array of opaque portions.

6. The method of claim 1 , wherein said second lithographic mask comprises another plurality of opaque portions overlying said plurality of protruding disposable template portions during said partially lithographically exposing of said unexposed photoresist portions employing said second lithographic mask.

7. The method of claim 6 , wherein said another plurality of opaque portions and said plurality of openings have a same pattern.

8. The method of claim 6 , wherein said another plurality of opaque portions form a two-dimensional periodic array of opaque portions.

9. The method of claim 6 , wherein said second lithographic mask further comprises a plurality of additional opaque portions overlying said planar portions of said photoresist during said partially lithographically exposing of said unexposed photoresist portions employing said second lithographic mask.

10. The method of claim 1 , further comprising forming a plurality of metallic pads on said substrate, wherein said plurality of protruding disposable template portions is formed directly on said plurality of metallic pads.

11. The method of claim 10 , further comprising forming a metallic seed layer directly on portions of said plurality of metallic pads and said plurality of disposable template portions.

12. The method of claim 11 , wherein said at least one metallic material is deposited directly on portions of said metallic seed layer at bottom surfaces of said plurality of cavities.

13. The method of claim 11 , further comprising removing remaining portions of said photoresist after said forming of said three dimensional metallic structures.

14. The method of claim 13 , further comprising removing physically exposed portions of said metallic seed layer after said removing of said remaining portions of said photoresist.

15. The method of claim 10 , wherein an electrically conductive path is formed between each of said three-dimensional metallic structures and one of said plurality of metallic pads.

16. The method of claim 1 , wherein said depositing of said at least one metallic material in said plurality of cavities comprises electrochemically co-depositing copper and nickel at a nickel atomic concentration in a range from 0.5% to 4.0%, and said method further comprises:
depositing a layer of silicon material on top of said at least one metallic material; and
annealing said at least one metallic material and said layer of silicon to homogenize said at least one metallic material and said silicon material.

Assignees

• Hougham Gareth G
• Mcvicker Gerard
• Pratt Anna
• Globalfoundries Inc

Inventors

• Hougham Gareth G
• Mcvicker Gerard
• Pratt Anna

Classifications

• G03F7/0037 Primary

  Production of three-dimensional images · CPC title

• C25D17/12 Primary

  Shape or form (C25D17/14 takes precedence) · CPC title

• C25D5/022

  using masking means · CPC title

• G03F7/2022

  Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure · CPC title

• C25D1/003

  3D structures, e.g. superposed patterned layers · CPC title