Method for surface-modifying metal silicide, and method and apparatus for preparing trichlorosilane using surface-modified metal silicide
US-2016332149-A1 · Nov 17, 2016 · US
US9340431B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9340431-B2 |
| Application number | US-201314142199-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 27, 2013 |
| Priority date | Mar 25, 2011 |
| Publication date | May 17, 2016 |
| Grant date | May 17, 2016 |
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A method of producing inorganic compound particles is provided. It includes a step of impregnating a melt liquid of second raw particles into first raw particles by heating a raw material including them at a temperature, which equals to or higher than an eutectic temperature between a region-II (solid-liquid phase range) and a region-I (solid phase range) in a phase diagram and lower than the melting temperature of the inorganic compound. The first raw particles contain an element with a melting point equals to or higher than a melting point of the inorganic compound. The second raw particles contain an element with a melting point lower than the inciting point of the inorganic compound. The method also includes a step of synthesizing inorganic compound particles by a synthetic reaction in the first raw particles between the elements contained in the first and second raw particles.
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The invention claimed is: 1. A method of producing inorganic compound particles of a composite including Mg and Si, the method comprising the steps of: impregnating a melt liquid of second raw particles into first raw particles by heating a raw material including the first raw particles, at least some of which contain Si as a major constituent element, and the second raw particles, which contain Mg as a major constituent element, at a temperature, which equals to or higher than an eutectic temperature between a region-II (solid-liquid phase range) and a region -I (solid phase range) in a phase diagram of Mg and Si, and lower than the melting temperature of the inorganic compound; and synthesizing the inorganic compound particles by a reaction in the first raw particles between the element contained in the first raw particles and the element contained in the second raw particles wherein heating in the step of impregnating is performed at a temperature of 650° C. or higher and lower than 945.6 ° C, particle sizes of the first raw particles are more than 20 μm and equal to or less than 500 μm, and particle sizes of the inorganic compound particles are more than 25 μm and equal to 1 mm or less after the step of synthesizing the inorganic compound particles. 2. The method of making inorganic compound particles according to claim 1 , wherein the first raw particles and the second raw particles are mixed in the raw material by an atomic ratio corresponding to the ratio of Si and Mg in the intended inorganic compound. 3. The method of producing inorganic compound particles according to claim 2 , wherein the first raw particles are mixtures including particles which consist of Si and particles which consist of elements other than Si. 4. The method of producing inorganic compound particles according to claim 2 , wherein the first raw particles are composite particles which consist of Si and elements other than Si. 5. The method of producing inorganic compound particles according to claim 1 , wherein the first raw particles are mixtures including particles which consist of Si and particles which consist of elements other than Si. 6. The method of producing inorganic compound particles according to claim 1 , wherein the first raw particles are composite particles which consist of Si and elements other than Si.
Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.] · CPC title
Aspects linked to processes or compositions used in powder metallurgy · CPC title
starting from solid material, e.g. by crushing, grinding or milling ({C22C1/1084 takes precedence}; crushing, grinding or milling, in general, see the relevant subclasses, e.g. B02C) · CPC title
temperature, temperature profile · CPC title
Hydrogen · CPC title
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