Method for surface-modifying metal silicide, and method and apparatus for preparing trichlorosilane using surface-modified metal silicide

US2016332149A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016332149-A1
Application numberUS-201515110229-A
CountryUS
Kind codeA1
Filing dateJan 19, 2015
Priority dateJan 23, 2014
Publication dateNov 17, 2016
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the presence of metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component. In cases where a silicon tetrachloride hydrochlorination reaction is performed using the method for preparing trichlorosilane according to the embodiment of the present invention, the yield of trichlorosilane can be raised.

First claim

Opening claim text (preview).

1 . A method for surface-modifying metal silicide, the method comprising: supplying silicon tetrachloride and inert gas to a modification reaction unit filled with metal silicide; modifying the surface of the metal silicide by heating the modification reaction unit to which the silicon tetrachloride and the inert gas are supplied; and cooling the surface-modified metal silicide while flowing the inert gas in the heated modification reaction unit. 2 . The method for surface-modifying metal silicide of claim 1 , wherein the metal silicide includes copper (Cu), aluminum (Al), and iron (Fe) as metal components. 3 . The method for surface-modifying metal silicide of claim 2 , wherein the content of aluminum (Al) in the metal silicide is 0.2 wt % or more to 0.76 wt % or less, and the content of iron (Fe) is 0.1 wt % or more to 0.24 wt % or less. 4 . The method for surface-modifying metal silicide of claim 2 , wherein a molar ratio of silicon (Si) and copper (Cu) which are present on the surface of the metal silicide has a range of 1 or more to 30 or less. 5 . The method for surface-modifying metal silicide of claim 1 , wherein the metal silicide includes nickel (Ni), aluminum (Al), and iron (Fe) as metal components. 6 . The method for surface-modifying metal silicide of claim 5 , wherein the content of aluminum (Al) in the metal silicide is 0.16 wt % or more to 0.61 wt % or less, and the content of iron (Fe) is 0.04 wt % or more to 0.39 wt % or less. 7 . The method for surface-modifying metal silicide of claim 5 , wherein a molar ratio of silicon (Si) and nickel (Ni) which are present on the surface of the metal silicide has a range of 1 or more to 40 or less. 8 . The method for surface-modifying metal silicide of claim 1 , wherein the silicon tetrachloride and the inert gas are supplied to the modification reaction unit with a molar ratio in a range of 1:1 to 1:10. 9 . A method for preparing trichlorosilane, the method comprising: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of the metal grade silicon, the silicon tetrachloride, and the hydrogen in the presence of the metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component, wherein the surface-modified metal silicide is formed by a reaction of the metal silicide and the silicon tetrachloride in an inert gas atmosphere. 10 . The method for preparing trichlorosilane of claim 9 , wherein the metal silicide includes at least one selected from copper (Cu) and nickel (Ni) and at least one selected from aluminum (Al) and iron (Fe) as a metal component. 11 . The method for preparing trichlorosilane of claim 9 , wherein the metal grade silicon is repetitively supplied to the reaction time at a time interval. 12 . The method for preparing trichlorosilane of claim 9 , wherein the pressure of the reaction unit is set to a range of 1 atm or more to 50 atm or less. 13 . The method for preparing trichlorosilane of claim 9 , wherein the temperature of the reaction unit is set to a range of 300° C. or more to 1,000° C. or less. 14 . The method for preparing trichlorosilane of claim 9 , the method further comprising: recirculating the remaining components except for the trichlorosilane of the product from the separation unit to the reaction unit. 15 . An apparatus for preparing trichlorosilane, the apparatus comprising: a modification reaction unit in which while metal silicide is charged and inert gas and silicon tetrachloride are supplied onto the metal silicide, a surface-modification reaction of the metal silicide occurs; a reaction unit which is connected to the modification reaction unit to generates trichlorosilane while the surface-modified metal silicide flows into the reaction unit and metal grad silicon, hydrogen, and the silicon tetrachloride are supplied on to the surface-modified metal silicide; and a separation unit which is connected to the reaction unit to receive the product generated in the reaction unit and separate a trichlorosilane component from the product. 16 . The apparatus for preparing trichlorosilane of claim 15 , the apparatus further comprising: a storage unit which temporarily stores the trichlorosilane separated from the separation unit. 17 . The apparatus for preparing trichlorosilane of claim 15 , wherein the separation unit further includes a first processing pipe which transfers the trichlorosilane separated from the product to the storage unit and a second processing pipe which recirculates the remaining components except for the trichlorosilane of the product to the reaction unit. 18 . The apparatus for preparing trichlorosilane of claim 15 , wherein the metal silicide includes at least one selected from copper (Cu) and nickel (Ni) and at least one selected from aluminum (Al) and iron (Fe) as a metal component. 19 . The apparatus for preparing trichlorosilane of claim 15 , wherein the reaction unit is formed by at least one selected from a fixed bed reactor, a mixing type reactor, and a fluidized bed reactor.

Assignees

Inventors

Classifications

  • Nozzle-type elements (nozzle-type reactors B01J19/26) · CPC title

  • from silicon · CPC title

  • Metal silicides (alloys C22) · CPC title

  • Constitutive chemical elements of heterogeneous catalysts · CPC title

  • involving a reaction between the support and a fluid · CPC title

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What does patent US2016332149A1 cover?
A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the pres…
Who is the assignee on this patent?
Korea Res Inst Chemical Tech, Hanwha Chemical Corp
What technology area does this patent fall under?
Primary CPC classification B01J23/755. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Thu Nov 17 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).