Semiconductor device having electrode and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9337293-B2
Application number	US-201313774470-A
Country	US
Kind code	B2
Filing date	Feb 22, 2013
Priority date	Feb 22, 2013
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with an electrode. An exemplary structure for a semiconductor device comprises a semiconductor substrate; an electrode over the semiconductor substrate, wherein the electrode comprises a trench in an upper portion of the electrode; and a dielectric feature in the trench.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate having a source and a drain of a transistor disposed therein;
an electrode over the semiconductor substrate and disposed between the source and the drain, wherein the electrode has a trench in an upper portion of the electrode, wherein the trench extends below a topmost surface of the electrode, wherein the electrode extends along a bottom surface of the trench, wherein a lower surface of the electrode does not extend below an upper surface of the semiconductor substrate; and
a dielectric feature in the trench, wherein the dielectric feature includes spacers along sidewalls of the trench and a dielectric filler interposed between the spacers, wherein a top surface of the dielectric feature is substantially coplanar with a top surface of the electrode.

2. The semiconductor device of claim 1 , wherein a ratio of a thickness of the dielectric feature to a thickness of the electrode is from about 0.5 to about 0.75.

3. The semiconductor device of claim 1 , wherein a ratio of a length of the dielectric feature to a length of the electrode is from about 0.1 to about 0.9.

4. The semiconductor device of claim 1 further comprising a high-k dielectric between the electrode and the dielectric feature.

5. The semiconductor device of claim 4 , wherein a ratio of a thickness of the dielectric feature to a thickness of the high-k dielectric is from about 1 to about 10.

6. A semiconductor device comprising:
a source region and a drain region in a semiconductor substrate; and
a gate stack over the semiconductor substrate between the source region and the drain region, the gate stack comprising a gate dielectric and a gate electrode that is disposed over the gate dielectric, the gate electrode comprising a trench in an upper portion of the electrode, and a dielectric feature in the trench, a depth of the trench being less than a thickness of the gate electrode;
wherein the gate electrode is a conductive material;
wherein a bottom surface of the trench is disposed below a topmost surface of the gate electrode; and
wherein a topmost surface of the dielectric feature is substantially coplanar with a topmost surface of the gate electrode, the topmost surface of the dielectric feature being substantially planar.

7. The semiconductor device of claim 6 , wherein a ratio of a thickness of the dielectric feature to a thickness of the gate electrode is from about 0.5 to about 0.75.

8. The semiconductor device of claim 6 , wherein a ratio of a length of the dielectric feature to a length of the gate electrode is from about 0.1 to about 0.9.

9. The semiconductor device of claim 6 , wherein the dielectric feature comprises a spacer or an interlayer dielectric layer disposed on a sidewall of the trench.

10. The semiconductor device of claim 6 further comprising a high-k dielectric between the gate electrode and the dielectric feature.

11. The semiconductor device of claim 10 , wherein a ratio of a thickness of the dielectric feature to a thickness of the high-k dielectric is from about 1 to about 10.

12. The semiconductor device of claim 10 , wherein the high-k dielectric comprises HfO x .

13. The semiconductor device of claim 10 , wherein the high-k dielectric is selected from the group consisting essentially of oxides of Li, Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and mixtures thereof.

14. The semiconductor device of claim 6 , wherein the gate electrode comprises W, Cu, Ti, Ag, Al, TiAl, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, TiN, WN, TaN, or Ru.

15. The semiconductor device of claim 6 , wherein a channel is defined below the gate stack in the substrate between the source region and the drain region.

16. A device comprising:
a source region and a drain region in a semiconductor substrate; and
a gate dielectric layer disposed over the semiconductor substrate;
a gate electrode disclosed over the gate dielectric layer, the gate electrode having a first trench extending from a topmost surface of the gate electrode into the gate electrode, the gate electrode extending completely below the first trench from a first sidewall of the first trench to a second sidewall of the first trench; and
a first dielectric feature in the first trench, the first dielectric feature having a topmost “surface that is coplanar with the topmost surface of the gate electrode and coplanar with” the topmost surface of the gate dielectric layer, wherein the gate electrode comprises a second trench adjacent to the first trench, a first portion of the gate electrode separating the first trench from the second trench, and wherein a second dielectric feature is disposed in the second trench.

17. The device of claim 16 , wherein each of the first dielectric feature and the second dielectric feature comprises a plurality of dielectric features.

18. The device of claim 1 , wherein the electrode comprises a plurality of trenches.

19. The device of claim 6 , wherein the gate electrode comprises a plurality of trenches.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Wang Pai-Chieh
• Wen Tsung Yao
• Chen Jyh-Huei

Classifications

• H10D64/01324

  characterised by the sectional shape, e.g. T or inverted-T · CPC title

• H10D64/017

  using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title

• H10D64/685

  being perpendicular to the channel plane · CPC title

• H10D64/666

  the conductor further comprising additional layers · CPC title