Compound semiconductor structure

Patent metadata

Field	Value
Publication number	US-9337265-B2
Application number	US-201414467660-A
Country	US
Kind code	B2
Filing date	Aug 25, 2014
Priority date	Aug 27, 2013
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

A semiconductor structure comprises a substrate comprising a first crystalline semiconductor material, a dielectric layer, above the substrate, defining an opening, a second crystalline semiconductor material at least partially filling the opening, and a crystalline interlayer between the substrate and the second crystalline semiconductor material. The first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched, and the crystalline interlayer comprises an oxygen compound. A method for fabricating semiconductor structure comprises the steps of providing a substrate including a first crystalline semiconductor material, patterning an opening in a dielectric layer above the substrate, the opening having a bottom, forming a crystalline interlayer on the substrate at least partially covering the bottom, and growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening. The crystalline semiconductor materials are lattice mismatched, and the crystalline interlayer comprises an oxygen compound.

First claim

What is claimed is:

1. A semiconductor structure comprising:
a substrate comprising a first crystalline semiconductor material;
a dielectric layer, above the substrate, defining an opening, wherein the opening includes non-crystalline sidewalls;
a second crystalline semiconductor material at least partially filling the opening;
a crystalline interlayer between the substrate and the second crystalline semiconductor material, wherein the non-crystalline sidewalls extend continuously from an uppermost surface of the substrate to above the crystalline interlayer all the way to an uppermost surface of the second crystalline semiconductor material, and wherein the uppermost surface of the second crystalline semiconductor material is coplanar with an uppermost surface of the opening
wherein:
the first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched; and
the crystalline interlayer comprises an oxygen compound.

2. The semiconductor structure of claim 1 , wherein the dielectric layer covers the substrate at least partially.

3. The semiconductor structure of claim 1 , wherein the crystalline interlayer is a crystalline oxide layer.

4. The semiconductor structure of claim 1 , wherein the opening further comprises a bottom, and the bottom corresponds to a surface of the substrate.

5. The semiconductor structure of claim 1 , wherein an aspect ratio of a depth (d) to a width (w) of the opening is at least one.

6. The semiconductor structure of claim 1 , the opening comprises a trench.

7. The semiconductor structure of claim 1 , wherein the first crystalline semiconductor material and the second crystalline semiconductor material are crystalline semiconductors having a lattice mismatch to another.

8. The semiconductor structure of claim 1 , wherein the second crystalline semiconductor material is one or more of the following: a III-V compound semiconductor material, a II-VI compound semiconductor material, or a IV-IV compound semiconductor material.

9. The semiconductor structure of claim 1 , wherein the crystalline interlayer comprises a multi-layer structure.

10. The semiconductor structure of claim 1 , wherein the crystalline interlayer comprises a diffusion barrier layer.

11. The semiconductor structure of claim 1 , wherein the crystalline interlayer has metallic conductivity.

12. The semiconductor structure of claim 1 , wherein the crystalline interlayer is one or more of the following: a ferroelectric, a ferromagnetic, or a piezoelectric material.

13. The semiconductor structure of claim 1 , wherein the crystalline interlayer comprises an insulating material.

14. The semiconductor structure of claim 1 , wherein the substrate comprising the first crystalline semiconductor material includes a silicon substrate oriented along a direction.

15. A wafer structure comprising:
a plurality of semiconductor structures each comprising:
a substrate comprising a first crystalline semiconductor material;
a dielectric layer, above the substrate, defining an opening, wherein the opening includes non-crystalline sidewalls;
a second crystalline semiconductor material filling the opening;
a crystalline interlayer between the substrate and the second crystalline semiconductor material, wherein the non-crystalline sidewalls extend continuously from an uppermost surface of the crystalline interlayer all the way to an uppermost surface of the second crystalline semiconductor material, and wherein the uppermost surface of the second crystalline semiconductor material is coplanar with an uppermost surface of the opening;
wherein:
the first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched; and
the crystalline interlayer comprises an oxygen compound.

Assignees

• Globalfoundries Inc

Inventors

• Abel Stefan
• Czornomaz Lukas
• Fompeyrine Jean
• El Kazzi Mario

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/2905 Primary

  Silicon, silicon germanium or germanium · CPC title