Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9337093-B2
Application number	US-201113182944-A
Country	US
Kind code	B2
Filing date	Jul 14, 2011
Priority date	Jul 15, 2010
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device comprising:
forming a first insulating film using a cyclic siloxane having a six-membered ring structure as a raw material;
forming a second insulating film over the first insulating film, using a cyclic siloxane having a six-membered ring structure as a raw material;
forming a trench in the second insulating film;
forming a via hole in the first insulating film such that an upper end of the via hole is connected to a bottom surface of the trench;
forming a modified layer on the bottom surface of the trench by treating the bottom surface of the trench with plasma generated from a carbon dioxide gas, wherein in forming the trench and the via hole in the first and second insulating films, the modified layer is formed on a sidewall of the via hole, and further wherein in forming the modified layer, the modified layer is formed on a bottom surface of the via hole concurrently when the modified layer is formed on the bottom surface of the trench; and
forming an interconnect by embedding the trench with a metal film.

2. The method of manufacturing a semiconductor device according to claim 1 , further comprising treating a surface of the modified layer with hydrogen plasma, after forming the modified layer.

3. The method according to claim 1 ,
wherein the modified layer is formed to have more carbon atoms per unit than the insulating film.

4. The method according to claim 3 ,
wherein the modified layer contains at least 20 at % of carbon.

Assignees

• Oshida Daisuke
• Kume Ippei
• Ueki Makoto
• Iguchi Manabu
• Inoue Naoya
• Maruyama Takuya
• Taiji Toshiji
• Katsuyama Hirokazu
• Renesas Electronics Corp

Inventors

• Oshida Daisuke
• Kume Ippei
• Ueki Makoto
• Iguchi Manabu
• Inoue Naoya
• Maruyama Takuya
• Taiji Toshiji
• Katsuyama Hirokazu

Classifications

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10W20/084

  for dual-damascene structures · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title