Methods for depositing films with organoaminodisilane precursors

Patent metadata

Field	Value
Publication number	US-9337018-B2
Application number	US-201313902300-A
Country	US
Kind code	B2
Filing date	May 24, 2013
Priority date	Jun 1, 2012
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H 3 group represented by the following Formula I below:

wherein R 1 and R 2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.

First claim

The invention claimed is:

1. A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising:
providing the at least one surface of the substrate in a reaction chamber;
introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H 3 group represented by the following Formula I below:

wherein R 1 is selected from a linear or branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing group, and a C 6 to C 10 aryl group; R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 6 alkenyl group, a linear or branched C 3 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C 6 to C 10 aryl group, a linear or branched C 1 to C 6 fluorinated alkyl group, an electron withdrawing group, and a C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring; and n=1 or 2; and
introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface, wherein the silicon-containing film is a film selected from the group consisting of amorphous silicon, crystalline silicon, silicon oxide, carbon doped silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, and combinations thereof.

2. The method of claim 1 wherein the at least one organoaminodisilane precursor is selected from the group consisting of di-iso-propylaminodisilane, di-sec-butylaminodisilane, di-tert-butylaminodisilane, 2,6-dimethylpiperidinodisilane, 2,2,6,6-tetramethylpiperidinodisilane, cyclohexyl-iso-propylaminodisilane, phenylmethylaminodisilane, phenylethylaminodisilane, di-cyclohexylaminodisilane, trans-decahydroquinolinyldisilane, 1,1-(N,N′-di-tert-butylethylenediamino)disilane, 1,1-(N,N′-di-iso-propylethylenediamino)disilane, 1,1-bis(tert-butylamino)disilane, 1,1-bis(tert-pentylamino)disilane, 1,1-bis(iso-propylamino)disilane, 1,1-bis(iso-propylmethlamino)disilane, 1,1-dipiperidinodisilane, 1,1-dipyrrolidinodisilane, 1,1-bis(diethylamino)disilane, 1,1-bis(di-iso-propylamino)disilane, 1,1-di(2,6-dimethylpiperidino)disilane, and 1,1-bis(di-sec-butylamino)disilane.

3. The method of claim 2 wherein the at least one organoaminodisilane precursor comprises phenylmethylaminosilane.

4. The method of claim 2 wherein the at least one organoaminodisilane precursor comprises di-sec-butylaminodisilane.

5. The method of claim 2 wherein the at least one organoaminodisilane precursor comprises 2,6-dimethylpiperidinodisilane.

6. The method of claim 1 wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixtures thereof.

7. The method of claim 1 wherein the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride.

8. A method of forming a silicon-containing film via an atomic layer deposition (ALD) process, the method comprising the steps of:
a. providing a substrate in an ALD reactor;
b. providing in the ALD reactor at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H 3 group represented by the following Formula I below:

wherein R 1 is selected from a linear or branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing group, and a C 6 to C 10 aryl group; R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 6 alkenyl group, a linear or branched C 3 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C 6 to C 10 aryl group, a linear or branched C 1 to C 6 fluorinated alkyl group, an electron withdrawing group, and a C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring; and n=1 or 2;
c. purging the ALD reactor with an inert gas;
d. providing a nitrogen-containing source in the ALD reactor;
e. purging the ALD reactor with an inert gas; and wherein steps b through e are repeated until a desired thickness of the film is obtained, wherein the silicon-containing film is a film selected from the group consisting of amorphous silicon, crystalline silicon, silicon oxide, carbon doped silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, and combinations thereof.

9. The method of claim 8 wherein the at least one organoaminodisilane precursor is selected from the group consisting of di-iso-propylaminodisilane, di-sec-butylaminodisilane, di-tert-butylaminodisilane, 2,6-dimethylpiperidinodisilane, 2,2,6,6-tetramethylpiperidinodisilane, cyclohexyl-iso-propylaminodisilane, phenylmethylaminodisilane, phenylethylaminodisilane, di-cyclohexylaminodisilane, trans-decahydroquinolinyldisilane, 1,1-(N,N′-di-tert-butylethylenediamino)disilane, and 1,1-(N,N′-di-iso-propylethylenediamino)disilane, 1,1-bis(tert-butylamino)disilane, 1,1-bis(tert-pentylamino)disilane, 1,1-bis(iso-propylamino)disilane, 1,1-bis(iso-propylmethlamino)disilane, 1,1-dipiperidinodisilane, 1,1-dipyrrolidinodisilane, 1,1-bis(diethylamino)disilane, 1,1-bis(di-iso-propylamino)disilane, 1,1-di(2,6-dimethylpiperidino)disilane, and 1,1-bis(di-sec-butylamino)disilane.

10. The method of claim 9 wherein the at least one organoaminodisilane precursor comprises phenylmethylaminodisilane.

11. The method of claim 9 wherein the at least one organoaminodisilane precursor comprises di-sec-butylaminodisilane.

12. The method of claim 9 wherein the at least one organoaminodisilane precursor comprises 2,6-dimethylpiperidinodisilane.

13. The method of claim 8 wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixtures thereof.

14. The method of claim 8 wherein the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride.

15. A method of forming a silicon-containing film onto at least a surface of a substrate using a deposition process selected from a plasma enhanced atomic layer (PEALD) process and a PECCVD process, the method comprising:
a. providing a substrate in an ALD reactor;
b. providing in the ALD reactor at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H 3 group represented by the following Formula I below:

wherein R 1 is selected from a linear or branched C 3 to C 10 alkyl g

Assignees

• Air Prod & Chem

Inventors

• Xiao Manchao
• Lei Xinjian
• Spence Daniel P
• Chandra Haripin
• Han Bing
• O'Neill Mark Leonard
• Mayorga Steven Gerard
• Mallikarjunan Anupama

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title