Semiconductor device and method
US-2024395867-A1 · Nov 28, 2024 · US
Method of forming seed layer and method of forming silicon-containing thin film
US8946065B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946065-B2 |
| Application number | US-201213661153-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 26, 2012 |
| Priority date | Oct 28, 2011 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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Provided is a method of forming a seed layer for forming a thin film, which is capable of further improving a thickness uniformity of the thin film. The method of forming a seed layer that is a seed of the thin film on a base includes adsorbing at least silicon included in an aminosilane-based gas on the base, by using the aminosilane-based gas; and depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane on the base, on which at least the silicon included in the aminosilane-based gas is adsorbed, by using the higher-order silane-based gas having an order that is equal to or higher than the disilane.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a silicon-containing thin film, the method comprising: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P14/3211Primary
Electricity · mapped topic
- H10P14/20Primary
Electricity · mapped topic
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- What does patent US8946065B2 cover?
- Provided is a method of forming a seed layer for forming a thin film, which is capable of further improving a thickness uniformity of the thin film. The method of forming a seed layer that is a seed of the thin film on a base includes adsorbing at least silicon included in an aminosilane-based gas on the base, by using the aminosilane-based gas; and depositing at least silicon included in a hig…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3211. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).