Charged particle detection system and multi-beamlet inspection system

Patent metadata

Field	Value
Publication number	US-9336981-B2
Application number	US-201113639491-A
Country	US
Kind code	B2
Filing date	Mar 31, 2011
Priority date	Apr 9, 2010
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

A charged particle detection system comprises plural detection elements and a multi-aperture plate in proximity of the detection elements. Charged particle beamlets can traverse the apertures of the multi-aperture plate to be incident on the detection elements. More than one multi-aperture plate can be provided to form a stack of multi-aperture plates in proximity of the detector. A suitable electric potential supplied to the multi-aperture plate can have an energy filtering property for the plural charged particle beamlets traversing the apertures of the plate.

First claim

The invention claimed is:

1. A charged particle detection system, comprising:
a first detector having an array of plural detection elements for detecting charged particles;
a first aperture plate having a first array of plural apertures to be traversed by charged particles and disposed at a first distance from the first detector;
a second aperture plate having a second array of plural apertures to be traversed by charged particles and disposed at a second distance from the first detector, the second distance being greater than the first distance; and
a voltage supply configured to supply a first electric potential to the first detector, to supply a second electric potential to the first aperture plate, and to supply a third electric potential to the second aperture plate;
wherein the apertures of the first aperture plate, the apertures of the second aperture plate and the detection elements of the first detector are substantially aligned relative to each other such that plural beamlets of charged particles can each traverse an aperture of the first aperture plate and an aperture of the second aperture plate to be incident on a detection element of the first detector; and
wherein the first electric potential, the second electric potential and the third electric potential are selected so that charged particles of the beamlets having a kinetic energy below a threshold energy cannot traverse the first array of plural apertures of the first aperture plate and are prevented from being incident on the detection elements.

2. The charged particle detection system according to claim 1 , wherein the first distance is greater than 50 times a minimum distance between adjacent detection elements.

3. The charged particle detection system according to claim 1 , wherein the first distance is less than 1000 times the minimum distance between adjacent detection elements.

4. The charged particle detection system according to claim 1 , wherein the second distance is greater than 1.5 times the first distance.

5. The charged particle detection system according to claim 1 , wherein the second distance is less than 5 times the first distance.

6. The charged particle detection system according to claim 1 , wherein the first and second electric potentials are measured relative to a same reference potential, and wherein the first electric potential has an absolute value which is greater than an absolute value of the second electric potential.

7. The charged particle detection system according to claim 6 , wherein the third electric potential is, relative to the reference potential, less than the second electric potential supplied to the first aperture plate.

8. The charged particle detection system according to claim 1 , further comprising a third aperture plate having an array of plural apertures and disposed at a third distance from the first detector which is less than the first distance, wherein the apertures of the third aperture plate are aligned relative to the apertures of the first aperture plate such that the each of the plural beamlets of charged particles can traverse an aperture of the third aperture plate.

9. The charged particle detection system according to claim 8 , wherein the voltage supply is configured to supply a fourth electric potential to the third aperture plate which is in between the electric potentials supplied to the first detector and the first aperture plate.

10. The charged particle detection system according to claim 1 , further comprising a fourth aperture plate having an array of plural apertures and disposed at a fourth distance from the first detector which is greater than the first distance and less than the second distance, wherein the apertures of the fourth aperture plate are aligned relative to the apertures of the first aperture plate such that the each of the plural beamlets of charged particles can traverse an aperture of the fourth aperture plate.

11. The charged particle detection system according to claim 10 , wherein the voltage supply is configured to supply a fifth electric potential to the fourth aperture plate which is in between the electric potentials supplied to the first aperture plate and the second aperture plate.

12. The charged particle detection system according to claim 1 , further comprising at least one charged particle lens provided by at least one of an electrostatic field and a magnetic field and disposed at a fifth distance from the first detector which is greater than the second distance, wherein the at least one charged particle lens is commonly traversed by the plural beamlets of charged particles.

13. The charged particle detection system according to claim 1 , further comprising at least one charged particle beam splitter disposed at a sixth distance from the first detector which is greater than the second distance, wherein the charged particle beam splitter is configured and arranged to direct charged particles prevented from being incident on the detection elements onto a second detector for detecting charged particles.

14. The charged particle detection system according to claim 13 , wherein the second detector has a plurality of detection elements.

15. A multi-beamlet inspection system for inspecting a substrate, comprising:
a charged particle detection system;
a charged particle source for generating a first array of charged particle beamlets;
first beam shaping optics for directing the array of charged particle beamlets onto the substrate to form an array of spots illuminated with charged particles on the substrate; and
second beam shaping optics for receiving charged particles emanating from the substrate and directing the received charged particles as a second array of charged particle beamlets towards the charged particle detection system;
wherein the charged particle detection system comprises:
a first detector having an array of plural detection elements for detecting charged particles;
a first aperture plate having a first array of plural apertures to be traversed by charged particles and disposed at a first distance from the first detector;
a second aperture plate having a second array of plural apertures to be traversed by charged particles and disposed at a second distance from the first detector, the second distance being greater than the first distance; and
a voltage supply configured to supply a first electric potential to the first detector, to supply a second electric potential to the first aperture plate, and to supply a third electric potential to the second aperture plate;
wherein the apertures of the first aperture plate, the apertures of the second aperture plate and the detection elements of the first detector are substantially aligned relative to each other such that plural beamlets of charged particles can each traverse an aperture of the first aperture plate and an aperture of the second aperture plate to be incident on a detection element of the first detector; and
wherein the first electric potential, the second electric potential and the third electric potential are selected so that charged particles of the beamlets having a kinetic energy below a threshold energy cannot traverse the first array of plural apertures of the first aperture plate and are prevented from being incident on the detection elements.

Assignees

• Knippelmeyer Rainer
• Applied Materials Israel Ltd
• Zeiss Carl Microscopy Gmbh

Inventors

• Knippelmeyer Rainer

Classifications

• H01J37/09

  Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields · CPC title

• H01J2237/24592

  Inspection and quality control of devices · CPC title

• H01J2237/2817

  Pattern inspection · CPC title

• H01J2237/0437

  Semiconductor substrate · CPC title

• H01J2237/0453

  multiple apertures · CPC title