Apparatus for evaluating quality of crystal, and method and apparatus for manufacturing semiconductor light-emitting device including the apparatus

Patent metadata

Field	Value
Publication number	US-9334582-B2
Application number	US-201514602447-A
Country	US
Kind code	B2
Filing date	Jan 22, 2015
Priority date	Feb 17, 2014
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor light-emitting device, the method comprising:
growing a wafer so that a surface feature is formed in one or more layers of the wafer for the semiconductor light-emitting device, the wafer including a first conductive layer, an active layer, and a second conductive layer;
measuring a surface reflectance of one or more of the first conductive layer, the active layer, and the second conductive layer of the wafer using an optical device during the growing of the wafer; and
evaluating a quality of crystal by calculating a difference of the measured surface reflectance over a time interval and by calculating a threading dislocation density of the wafer.

2. The method of claim 1 , wherein the measuring of the surface reflectance comprises:
radiating incident light onto the wafer; and
receiving reflected light from the wafer.

3. The method of claim 2 , wherein the measuring of the surface reflectance further comprises one of changing a path of the incident light or the reflected light and focusing the incident light or the reflected light.

4. The method of claim 2 , wherein the incident light is in a wavelength area in which no Fabry-Perot interference occurs.

5. The method of claim 2 , wherein a wavelength of the incident light is substantially between 300 nm and 420 nm.

6. The method of claim 1 , wherein the evaluating comprises:
measuring a surface reflectance of the wafer during the time interval; and
calculating a threading dislocation density of the wafer by using the difference in the surface reflectance collected during the time interval.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Seo Jong-Uk
• Kim Byoung-Kyun
• Yoon Suk-Ho
• Lee Keon-Hun
• Lee Kee-Won
• Rhee Do-Young
• Lee Sang-Don

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title