Power semiconductor package with multi-section conductive carrier

Patent metadata

Field	Value
Publication number	US-9331005-B2
Application number	US-201514826103-A
Country	US
Kind code	B2
Filing date	Aug 13, 2015
Priority date	Oct 18, 2012
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

In one implementation, a power semiconductor package includes a non-contiguous, multi-section conductive carrier. A control transistor with a control transistor terminal is coupled to a first section of the multi-section conductive carrier, while a sync transistor with a sync transistor terminal is coupled to a second section of the multi-section conductive carrier. The first and second sections of the multi-section conductive carrier sink heat generated by the control and sync transistors. The first and second sections of the multi-section conductive carrier are electrically connected only through a mounting surface attached to the power semiconductor package. Another implementation of the power semiconductor package includes a driver IC coupled to a third section of the multi-section conductive carrier. A method for fabricating the power semiconductor package is also disclosed. The power semiconductor package according to the present disclosure results in effective thermal protection, current carrying capability, and a relatively small size.

First claim

The invention claimed is:

1. A power semiconductor package comprising:
a multi-section conductive carrier;
a first power transistor coupled to a first section of said multi-section conductive carrier;
a second power transistor coupled to a second section of said multi-section conductive carrier;
said multi-section conductive carrier sinking heat generated by said first and second power transistors;
said first and second sections of said multi-section conductive carrier being electrically connected only through a mounting surface attached to said power semiconductor package.

2. The power semiconductor package of claim 1 , wherein said first and second power transistors form a power switching stage of a voltage converter.

3. The power semiconductor package of claim 1 , wherein said multi-section conductive carrier is made from a patterned lead frame.

4. The power semiconductor package of claim 1 , wherein said first power transistor is a control FET.

5. The power semiconductor package of claim 1 , wherein said second power transistor is a sync FET.

6. The power semiconductor package of claim 1 , wherein said first power transistor is a control FET, and said second power transistor is a sync FET, and wherein a source of said control FET is coupled to a drain of said sync FET.

7. The power semiconductor package of claim 6 , wherein said source of said control FET is coupled to said drain of said sync FET through a switch node section of said multi-section conductive carrier.

8. The power semiconductor package of claim 1 , further comprising a patterned dielectric situated between a plurality of sections of said multi-section conductive carrier.

9. The power semiconductor package of claim 1 , further comprising an insulator layer overlying said multi-section conductive carrier.

10. The power semiconductor package of claim 1 , wherein said mounting surface is a printed circuit board (PCB).

11. The power semiconductor package of claim 1 , wherein said power semiconductor package is attached to said mounting surface by solder bodies.

12. A method for fabricating a power semiconductor package comprising:
providing a multi-section conductive carrier;
attaching a first power transistor and a second power transistor to said multi-section conductive carrier;
forming a dielectric layer over said multi-section conductive carrier and said first and second power transistors;
fabricating conductive layers of said multi-section conductive carrier over said dielectric layer and said first and second power transistors;
attaching a mounting surface to said multi-section conductive carrier so as to electrically connect said first and second power transistors.

13. The method of claim 12 further comprising forming an insulator layer after said fabricating said conductive layers.

14. The method of claim 12 , wherein said first and second power transistors form a power switching stage of a voltage converter.

15. The method of claim 12 , wherein said multi-section conductive carrier is made by patterning a lead frame.

16. The method of claim 12 , wherein said first power transistor is a control FET.

17. The method of claim 12 , wherein said second power transistor is a sync FET.

18. The method of claim 12 , wherein said first power transistor is a control FET, and said second power transistor is a sync FET, and wherein a source of said control FET is coupled to a drain of said sync FET.

19. The method of claim 18 , wherein said source of said control FET is coupled to said drain of said sync FET through a switch node section of said multi-section conductive carrier.

20. The method of claim 12 , wherein said mounting surface is a printed circuit board (PCB).

Assignees

• Int Rectifier Corp
• Infineon Technologies Americas Corp

Inventors

• Cho Eung San

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/10

  Configurations of laterally-adjacent chips · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title