Lithographic apparatus configured to reconstruct an aerial pattern and to compare the reconstructed aerial pattern with an aerial pattern detected by an image sensor

Patent metadata

Field	Value
Publication number	US-9329500-B2
Application number	US-59837708-A
Country	US
Kind code	B2
Filing date	Apr 29, 2008
Priority date	May 3, 2007
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

The invention relates to an image for detection of an aerial pattern comprising spatial differences in radiation intensity in a cross section of a beam of radiation in a lithographic apparatus for exposing a substrate. The image sensor comprises a lens ( 5 ) arranged to form a detection image of the aerial pattern and an image detector ( 6 ) arranged to measure radiation intensities in a plurality, of positions in the detection image.

First claim

The invention claimed is:

1. A lithographic apparatus for exposing a substrate to a beam of radiation, comprising:
a patterning device for forming an aerial pattern in the beam of radiation and including an object mark having comparable dimensions to critical dimension features of a circuit pattern, the aerial pattern comprising spatial differences in radiation intensity in a cross section of the beam of radiation;
a projection system configured to project the aerial pattern onto the substrate;
a substrate table comprising an image sensor for detection of the aerial pattern, the image sensor comprising:
a lens configured to form a detection image of the aerial pattern; and
an image detector configured to measure radiation intensities in a plurality of positions in the detection image;

an aberration sensor configured to measure aberrations of the projection system, wherein the aberration sensor is configured to determine an aberration footprint per field point of the projection system;
a control unit configured to model a reconstructed aerial pattern using information of the patterning device and the measured aberrations of the projection system, to compare the modeled reconstructed aerial pattern with the aerial pattern detected by the image sensor, and to calculate adjustment data based on the comparison of the modeled reconstructed aerial pattern and the aerial pattern detected by the image sensor; and
a parameter adjustment device configured to control at least one parameter of the lithographic apparatus based on the adjustment data such that a difference between the modeled reconstructed aerial pattern and the aerial pattern detected by the image sensor is minimized.

2. The lithographic apparatus according to claim 1 , wherein the image sensor comprises an amplification device configured to amplify the spatial differences in radiation intensity in the detection image.

3. The lithographic apparatus according to claim 2 , wherein the amplification device is a multichannel plate.

4. The lithographic apparatus according to claim 1 , wherein the image sensor is configured to be positioned by a positioner, and wherein the lens comprises a reference mark for determining a position of the image sensor.

5. The lithographic apparatus according to claim 4 , further comprising an alignment sensor for measuring a position of an alignment mark on the substrate, and wherein the reference mark is configured so that a position of the reference mark can be determined by the alignment sensor.

6. The lithographic apparatus according to claim 1 , wherein the parameter adjustment device is an illumination setting adjustment device configured for adjusting illumination settings of the beam of radiation.

7. The lithographic apparatus according to claim 1 , wherein the patterning device comprises:
an exposure area with patterns of a product to be formed by exposing a substrate to an image of the patterns, and
a further pattern in the exposure area, the further pattern being configured to be detected by the image sensor.

8. The lithographic apparatus according to claim 1 , wherein the aberration sensor is a wavefront aberration sensor.

9. The lithographic apparatus according to claim 1 , wherein the at least one parameter is selected from a group consisting of a position of a component of the projection system and a position of a component of an illumination system.

10. The lithographic apparatus according to claim 1 , wherein the patterning device comprises programmable mirrors, and wherein the at least one parameter comprises positions of the programmable mirrors of the patterning device.

11. A lithographic apparatus for exposing a substrate to a beam of radiation, comprising:
a patterning device for forming a first aerial pattern in the beam of radiation, and including an object mark having comparable dimensions to critical dimension features of a circuit pattern;
a projection system configured to project the first aerial pattern onto the substrate;
an image sensor configured to detect the first aerial pattern;
a control unit configured to model a reconstructed aerial pattern using information of the patterning device, to compare the modeled reconstructed aerial pattern with the first aerial pattern detected by the image sensor, and to calculate adjustment data based on the comparison of the modeled reconstructed aerial pattern and the first aerial pattern detected by the image sensor; and
a parameter adjustment device configured to control at least one parameter of the lithographic apparatus based on the adjustment data such that a difference between the modeled reconstructed aerial pattern and the aerial pattern detected by the image sensor is minimized.

Assignees

• Staals Frank
• Lof Joeri
• Loopstra Erik Roelof
• Tel Wim Tjibbo
• Moest Bearrach
• Asml Netherlands Bv

Inventors

• Staals Frank
• Lof Joeri
• Loopstra Erik Roelof
• Tel Wim Tjibbo
• Moest Bearrach

Classifications

• G03F7/70483

  Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring · CPC title

• G03F7/7085 Primary

  Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load · CPC title

• G03F9/7088

  Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection · CPC title

• G03F7/70341

  Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply (chemical composition of immersion liquids G03F7/2041) · CPC title

• G03F7/70666

  Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system · CPC title