Apparatus for manufacturing a silicon carbide single crystal comprising a mounting portion and a purge gas introduction system

Patent metadata

Field	Value
Publication number	US-9328431-B2
Application number	US-201113325233-A
Country	US
Kind code	B2
Filing date	Dec 14, 2011
Priority date	Dec 16, 2010
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a surface of a seed crystal made from a silicon carbide single crystal substrate by supplying a material gas for silicon carbide from below the seed crystal. The apparatus includes a base having a first side and a second side opposite to the first side. The seed crystal is mounted on the first side of the base. The apparatus further includes a purge gas introduction mechanism for supporting the base and for supplying a purge gas to the base from the second side of the base. The base has a purge gas introduction path for discharging the supplied purge gas from the base toward an outer edge of the seed crystal.

First claim

What is claimed is:

1. An apparatus for manufacturing a silicon carbide single crystal by growing the silicon carbide single crystal on a surface of a seed crystal made from a silicon carbide single crystal substrate by supplying a material gas for silicon carbide from below the seed crystal, the apparatus comprising:
a base including a mounting portion where the seed crystal is mounted, the mounting portion including a first side and a second side opposite to the first side, the seed crystal is mounted on the first side of the mounting portion; and
a purge gas introduction mechanism attached to the base and supplying a purge gas to the base from the second side of the mounting portion, wherein
the mounting portion includes a large diameter portion located on a top of a small diameter portion and includes a purge gas introduction path downwardly extending along a center the large diameter portion and thereafter extending in the radial outward direction with respect to the center axis of the small diameter portion.

2. The apparatus according to claim 1 , wherein
an outlet of the purge gas introduction path is directed in a radial outward direction with respect to a center axis of the base so that the purge gas is discharged in a direction from the outer edge of the seed crystal and flows along a lower surface of the base.

3. The apparatus according to claim 1 , wherein
the purge gas introduction mechanism is configured to supply the purge gas as an inert gas, an etching gas, a dopant gas for silicon carbide, or a mixture gas of at least two of the inert gas, the etching gas, and the dopant gas.

4. The apparatus according to claim 1 , wherein
a surface of the base is coated with a refractory metal carbide.

5. The apparatus according to claim 1 , wherein the purge gas introduction mechanism is configured to rotate and lift the base, the seed crystal, and the silicon carbide single crystal via a pipe member that includes
a first end connected to a surface of the base portion opposite to the surface where the seed crystal is mounted, and
a second end connected to the purge gas introduction mechanism.

6. The apparatus according to claim 1 , further comprising
a mounting plate is attached to an end of the small diameter portion.

7. An apparatus for manufacturing a silicon carbide single crystal by growing the silicon carbide single crystal on a surface of a seed crystal made from a silicon carbide single crystal substrate by supplying a material gas for silicon carbide from below the seed crystal, the apparatus comprising:
a base including a mounting portion where the seed crystal is mounted, the mounting portion including a first side and a second side opposite to the first side, seed crystal is mounted on the first side of the mounting portion;
a canopy portion including a first end attached to a large diameter portion and a second end angled toward a small diameter portion; and
a purge gas introduction mechanism attached to the base and supplying a purge gas to the base from the second side of the mounting portion, wherein
the mounting portion includes a large diameter portion located on a top of a small diameter portion, and
the second end of the canopy portion is spaced from the small diameter portion such that purge gas flowing through a purge gas introduction path can be discharged through a clearance between the canopy portion and the small diameter portion.

8. The apparatus according to claim 7 , wherein
the purge gas introduction mechanism is configured to supply the purge gas as an inert gas, an etching gas, a dopant gas for silicon carbide, or a mixture gas of at least two of the inert gas, the etching gas, and the dopant gas.

9. The apparatus according to claim 7 , wherein the purge gas introduction mechanism is configured to rotate and lift the base, the seed crystal, and the silicon carbide single crystal via a pipe member that includes
a first end connected to a surface of the base portion opposite to the surface where the seed crystal is mounted, and
a second end connected to the purge gas introduction mechanism.

10. The apparatus according to claim 7 , wherein
a surface of the base is coated with a refractory metal carbide.

11. The apparatus according to claim 7 , further comprising
a mounting plate is attached to an end of the small diameter portion.

12. The apparatus according to claim 7 , wherein
the canopy portion surrounds the small diameter portion.

13. The apparatus according to claim 7 , wherein
the first end of the canopy portion is attached to a lower surface of the large diameter portion.

14. An apparatus for manufacturing a silicon carbide single crystal by growing the silicon carbide single crystal on a surface of a seed crystal made from a silicon carbide single crystal substrate by supplying a material gas for silicon carbide from below the seed crystal, the apparatus comprising:
a base including a mounting portion where the seed crystal is mounted, the mounting portion including a first side and a second side opposite to the first side, the seed crystal is mounted on the first side of the mounting portion;
a canopy portion including a first end attached to a large diameter portion and a second end angled toward a small diameter portion; and
a purge gas introduction mechanism attached to the base and supplying a purge gas to the base from the second side of the mounting portion, wherein
the mounting portion includes a large diameter portion located on a top of a small diameter portion, and
the mounting portion further includes a purge gas introduction path downwardly extending along a center of the large diameter portion and thereafter extending in the radial outward direction with respect to the center axis of the small diameter portion.

15. The apparatus according to claim 14 , wherein
the purge gas introduction mechanism is configured to supply the purge gas as an inert gas, an etching gas, a dopant gas for silicon carbide, or a mixture gas of at least two of the inert gas, the etching gas, and the dopant gas.

16. The apparatus according to claim 14 , wherein the purge gas introduction mechanism is configured to rotate and lift the base, the seed crystal, and the silicon carbide single crystal via a pipe member that includes
a first end connected to a surface of the base portion opposite to the surface where the seed crystal is mounted, and
a second end connected to the purge gas introduction mechanism.

17. The apparatus according to claim 14 , wherein
a surface of the base is coated with a refractory metal carbide.

18. The apparatus according to claim 14 , further comprising
a mounting plate is attached to an end of the small diameter portion.

19. The apparatus according to claim 14 , wherein
the canopy portion surrounds the small diameter portion.

20. The apparatus according to claim 14 , wherein
the first end of the canopy portion is attached to a lower surface of the large diameter portion.

Assignees

• Hara Kazukuni
• Tokuda Yuuichirou
• Denso Corp

Inventors

• Hara Kazukuni
• Tokuda Yuuichirou

Classifications

• H10P14/20

  of semiconductor materials · CPC title

• C30B25/165 Primary

  the flow of the reactive gases · CPC title

• C30B25/14

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title

• C30B25/12

  Substrate holders or susceptors · CPC title

• C30B29/36 Primary

  Carbides · CPC title