Process for manufacturing a plurality of wave energy emitters

Patent metadata

Field	Value
Publication number	US-9321079-B2
Application number	US-201314054355-A
Country	US
Kind code	B2
Filing date	Oct 15, 2013
Priority date	Oct 15, 2012
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

A process for manufacturing a wave energy emitter and a system for manufacturing the same.

First claim

The invention claimed is:

1. A process for manufacturing a plurality of wave energy emitters in an emitter assembly or structure comprising:
executing a first process step comprising calculating and creating a first data defining a desired fractal antenna comprising fractal resonating structures having fractal elements formed in a substrate including:
defining attributes of the desired fractal antenna comprising the fractal elements to include fractal order number N;
defining a distance ratio defined as a ratio of distance traveled between an initially selected random position and an incrementally selected fractal vertices of said fractal elements within a circle transcribed around all potential vertices of the desired fractal antenna; and
defining potential coordinate points defining the desired fractal antenna in said substrate based on the defined attributes and the distance ratio;

executing a second process step comprising determining a minimum separation distance between boundary edges of adjacent said fractal resonating structures and fractal elements defined in said first data required to ensure structural integrity of the fractal resonating structures and fractal elements within said substrate is maintained, wherein the minimum separation distance is further determined based on a predetermined performance specification of the fractal resonating structures and the fractal elements comprising desired frequencies associated with each resonating structures and related fractal element as well as thickness and type of material the substrate is formed from;
executing a third process step determining coordinates of an initial plurality of potential material removal points in said substrate that may be removed from the defined said desired fractal antenna's fractal pattern based on the first data, the minimum separation distance, and a predetermined material removal point size or iteration number;
executing a fourth process step comprising determining locations of the substrate where substrate material will be removed based on deletion of some of the initial plurality of potential material removal points which degrade said structural or mechanical integrity of the desired fractal antenna by determining the potential material removal points that meet at least one deletion parameter, the at least one deletion parameter is determined based on an identification of a closest potential material removal point to one or more selected said potential material removal point, the identification of the closet material removal point is further based on an iterative analysis of all said potential material removal points where each iteration determines a plurality of mean squared distances between each respective said selected potential material removal points and all closest other said potential material removal points to the respective said selected potential material removal point, then selecting a smallest means squared distance from the plurality of means squared distances then deleting the closest potential material removal point having said smallest mean squared distance, then repeating the step of determining potential removal points that meet at least one said deletion parameter step until no remaining potential material removal points have a means squared distance with adjacent potential material removal points equal to or less than the minimum separation distance previously determined to produce a final plurality of potential material removal points;
executing a fifth process step comprising iteratively starting with a starting material removal point closest to a center of a selected smallest emitting structure comprising one of said fractal resonating structures amongst said final plurality of potential material points, using a material removal device to remove material from the substrate around the selected smallest emitting structure in the antenna substrate based on the final plurality of potential material removal points until the smallest emitting structure comprising the fractal antennas, emit or resonate at a first predetermined percent of under each desired frequency associated with each associated emitter; repeat for all same sized emitting structures as the smallest emitting structure;
executing a sixth process step comprising repeating the process step at the fifth process step for a next largest emitter area, continuing until all of the emitters are designed to be tuned to their associated said first predetermined percentage below respective said selected fractal resonating structure's desired frequency percentage increment below an associated said desired frequency, then iteratively repeating the sixth process step until no said emitter or fractal resonating structures comprising said fractal elements remain to be tuned by material removal at each said first predetermined percentage;
executing a seventh process step comprising repeating the fifth and sixth process steps using successive different associated second predetermined percentages which are smaller than iteratively selected said first predetermined frequency percentage lower than the desired frequency of each iteratively selected emitter comprising said fractal resonating structure and fractal elements;
repeating said seventh process step until all said emitters comprising said fractal resonating structures and related fractal elements are determined for resonating or emitting at a predetermined range of the desired frequency associated with each emitter within a predetermined plus or minus percentage.

2. A process as in claim 1 , wherein said material removal device comprises a laser, drill, or another cutting device.

3. A process as in claim 1 , wherein said second predetermined percentage that is smaller than the first predetermined frequency percentage comprises one percent lower than the desired frequency of each iteratively selected emitter.

4. A process as in claim 1 , wherein said first predetermined percentage below the selected emitter's desired frequency comprises five percent below the desired frequency.

5. A process as in claim 1 , wherein said substrate comprises a metal.

6. A process as in claim 1 , wherein said predetermined plus or minus percentage comprises +/−0.1 percent.

7. A process as in claim 1 , wherein at least some of said each associated emitter comprise a fractal emitter.

Assignees

• Whitaker George
• Us Navy

Inventors

• Whitaker George

Classifications

• G08B13/1609

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• G01N29/221

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• A61B8/00

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• Y10T29/49005

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• G10K13/00

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