Barrier infrared detectors on lattice mismatch substrates
US-9214581-B2 · Dec 15, 2015 · US
Fabrication method of inverted solar cells
US9318643B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9318643-B2 |
| Application number | US-201414147498-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 4, 2014 |
| Priority date | Jul 7, 2011 |
| Publication date | Apr 19, 2016 |
| Grant date | Apr 19, 2016 |
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Abstract
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A fabrication method for an inverted solar cell includes: (1) providing a growth substrate; (2) depositing a SiO 2 mask layer over the surface of the growth substrate to form a patterned substrate; (3) forming a sacrificial layer with epitaxial growth over the patterned substrate, wherein the sacrificial layer encompasses the entire SiO 2 mask pattern; (4) forming a buffer layer over the sacrificial layer via epitaxial growth; (5) forming a semiconductor material layer sequence of the inverted solar cell over the buffer layer with epitaxial growth; (6) bonding the semiconductor material layer sequence of the inverted solar cell with a supporting substrate; (7) selectively etching the SiO 2 mask layer by wet etching; and (8) selectively etching the sacrificial layer by wet etching to lift off the growth substrate.
First claim
Opening claim text (preview).
The invention claimed is: 1. A fabrication method for an inverted solar cell, comprising: (1) providing a growth substrate; (2) depositing a SiO 2 mask layer over the surface of the growth substrate to form a patterned substrate; (3) forming a sacrificial layer with epitaxial growth over the patterned substrate, wherein the sacrificial layer surrounds the entire SiO 2 mask layer; (4) forming a buffer layer over the sacrificial layer via epitaxial growth; (5) forming a se…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10F71/1272Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L31/1844Primary
Electricity · mapped topic
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- What does patent US9318643B2 cover?
- A fabrication method for an inverted solar cell includes: (1) providing a growth substrate; (2) depositing a SiO 2 mask layer over the surface of the growth substrate to form a patterned substrate; (3) forming a sacrificial layer with epitaxial growth over the patterned substrate, wherein the sacrificial layer encompasses the entire SiO 2 mask pattern; (4) forming a buffer layer over the sacr…
- Who is the assignee on this patent?
- Xiamen Sanan Optoelectronics Technology Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10F71/1272. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).