Organic light emitting diode display having thin film transistor substrate using oxide semiconductor

Patent metadata

Field	Value
Publication number	US-9318616-B2
Application number	US-201414446056-A
Country	US
Kind code	B2
Filing date	Jul 29, 2014
Priority date	Jul 30, 2013
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

Provided is a thin film transistor having an oxide semiconductor material for an organic light emitting diode display and a method for manufacturing the same. The organic light emitting diode display includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; a semiconductor layer formed on the gate insulating layer to overlap with the gate electrode, and including a channel area and source and drain areas which extend from the channel area to both outsides, respectively and are conductorized; an etch stopper formed on the channel area and exposing the source area and the drain area; a source electrode contacting portions of the exposed source electrode; and a drain electrode contacting portions of the exposed drain electrode.

First claim

What is claimed is:

1. An organic light emitting diode (OLED) display comprising:
a gate electrode formed on a substrate;
a gate insulating layer formed on the gate electrode;
a semiconductor layer formed on the gate insulating layer to overlap with the gate electrode, and including a channel area and source and drain areas which extend from the channel area to lateral end portions, respectively, and are conductorized;
an etch stopper formed on the channel area and exposing the source area and the drain area;
a source electrode contacting portions of the exposed source area; and
a drain electrode contacting portions of the exposed drain area,
wherein the source electrode and the drain electrode each include a first metal layer and a second metal layer stacked on the first metal layer,
wherein the etch stopper formed on the channel area does not contact the source and drain electrodes,
wherein the first metal layer and second metal layers of the source and drain electrodes have a substantially same shape and size, respectively, and
wherein the conductorized source and drain areas extend from a top surface of the semiconductor layer to a bottom surface of the semiconductor layer.

2. The OLED device according to claim 1 , wherein the source electrode contacts a surface of the portions of the exposed source area that is apart from the channel area toward one of the lateral end portions with a first predetermined distance, and the other portions of the source area between the source electrode and the channel area are exposed; and
wherein the drain electrode contacts a surface of the portions of the exposed drain area that is apart from the channel area toward the other lateral end portion with a second predetermined distance, and the other portions of the drain area between the source electrode and the channel area are exposed.

3. The OLED device according to claim 1 , wherein the etch stopper is disposed on an entire surface of the substrate on the semiconductor layer, and includes a source area hole exposing the source area and a drain area hole exposing the drain area.

4. The OLED device according to claim 1 , wherein the etch stopper and the channel area have a size and a shape that are the same as those of the gate electrode.

5. The OLED device according to claim 1 , wherein the semiconductor layer includes an oxide semiconductor material and;
wherein the source area and the drain area include a conductorized portion of the oxide semiconductor material.

Assignees

• Lg Display Co Ltd

Inventors

• Hong Sungjin
• Ahn Byungchul
• Koh Youngju
• Nam Woojin
• Tani Ryosuke

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H10D30/6713

  characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title