Semiconductor fin devices and method of fabricating the semiconductor fin devices

Patent metadata

Field	Value
Publication number	US-9318491-B2
Application number	US-201414547190-A
Country	US
Kind code	B2
Filing date	Nov 19, 2014
Priority date	Feb 28, 2014
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

A semiconductor device includes a substrate, an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate, and a channel-forming structure comprising crystalline semiconductor material. The channel-forming structure has a lower portion located in the trench and fins extending upright on the lower portion, where the fins are spaced from each other and are each narrower than an opening of the trench, and the lower portion of the channel forming structure has a higher crystal defect density than the fins of the channel forming structure.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate;
a channel-forming structure comprising crystalline semiconductor material, the channel-forming structure having a lower portion located in the trench and fins extending upright on the lower portion, wherein the fins are spaced from each other and are each narrower than an opening of the trench, and the lower portion of the channel-forming structure has a higher crystal defect density than the fins of the channel-forming structure.

2. The semiconductor device of claim 1 , wherein the fins are devoid of crystal defects.

3. The semiconductor device of claim 1 , wherein the fins extend along a length of the trench, are spaced from each other in a widthwise direction of the trench, and are each narrower than the trench in the widthwise direction.

4. The semiconductor device of claim 1 , wherein the fins extend upward beyond the opening of the trench.

5. The semiconductor device of claim 1 , wherein the crystal defect density in the lower portion of the channel-forming structure increases in a depth direction of the trench.

6. The semiconductor device of claim 1 , wherein the fins include respective buffer patterns which are a unitary part of the lower portion of the channel-forming structure, and fin-shaped channel patterns on the respective buffer patterns, the buffer patterns and the fin-shaped channel patterns having different energy band gaps.

7. The semiconductor device of claim 6 , wherein the fin-shaped channel patterns comprise a material selected from the group consisting of Ge, SiGe, and a Group III-V semiconductor compound.

8. The semiconductor device of claim 6 , wherein the buffer patterns and the fin-shaped channel patterns are formed of Group III-V semiconductor compounds having respectively different energy band gaps.

9. The semiconductor device of claim 1 , wherein the channel-forming structure is a unitary body of semiconductor material.

10. The semiconductor device of claim 9 , wherein the semiconductor material is selected from the group consisting of Ge, SiGe, and a Group III-V semiconductor compound.

11. The semiconductor device of claim 3 , wherein a depth-to-width aspect ratio of the trench is between 1:1 and 3:1 both inclusive.

12. The semiconductor device of claim 11 , wherein the width of the trench is at least 50 nm.

13. The semiconductor device of claim 3 , further comprising a gate electrode extending longitudinally across the fins in the widthwise direction of the trench, a gate insulating layer interposed between the gate electrode and the fins, and source/drain regions in the trench at opposite ends of the fins.

14. A semiconductor device comprising:
a semiconductor substrate;
an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate, wherein a depth-to-width aspect ratio of the trench is between 1:1 and 3:1 both inclusive; and
a crystalline channel-forming structure disposed in the trench, the crystalline channel-forming structure having an epitaxial lower portion disposed on the surface portion of the semiconductor substrate and occupying a bottom portion of the trench, and epitaxial fins extending upright on the lower portion,
wherein the epitaxial fins are spaced from each other in a widthwise direction of the trench and are each narrower than the trench in the widthwise direction.

15. The semiconductor device of claim 14 , wherein the width of the trench is at least 50 nm.

16. The semiconductor device of claim 15 , wherein the epitaxial fins include respective buffer patterns which are a unitary part of the epitaxial lower portion of the crystalline channel-forming structure, and fin-shaped epitaxial channel patterns on the respective buffer patterns, the buffer patterns and the fin-shaped channel patterns having different energy band gaps.

17. The semiconductor device of claim 16 , wherein the buffer pattern and the fin-shaped channel patterns are formed of Group III-V semiconductor compounds having respectively different energy band gaps.

18. The semiconductor device of claim 14 , further comprising a gate electrode extending longitudinally across the epitaxial fins in the widthwise direction of the trench, a gate insulating layer interposed between the gate electrode and the epitaxial fins, and source/drain regions in the trench at opposite ends of the epitaxial fins.

19. A semiconductor device comprising:
a substrate;
an insulating layer disposed on the substrate and having a first trench exposing a first surface portion of the substrate and a second trench exposing a second surface portion of the substrate;
a first channel-forming structure comprising crystalline semiconductor material, the first channel-forming structure having a first lower portion located in the first trench and first fins extending upright on the first lower portion, wherein the first fins are of a first conductivity type, are spaced from each other and are each narrower than an opening of the first trench, and wherein the first lower portion of the first channel-forming structure has a higher crystal defect density than the first fins of the first channel-forming structure; and
a second channel-forming structure comprising crystalline semiconductor material, the second channel-forming structure having a second lower portion located in the second trench and second fins extending upright on the second lower portion, wherein the second fins are of a second conductivity type, are spaced from each other and are each narrower than an opening of the second trench, and wherein the second lower portion of the second channel-forming structure has a higher crystal defect density than the second fins of the second channel-forming structure.

20. The semiconductor device of claim 19 , further comprising:
a first gate electrode extending longitudinally across the first fins in a widthwise direction of the first trench, a first gate insulating layer interposed between the first gate electrode and the first fins, and first source/drain regions in the first trench at opposite ends of the first fins, wherein the first fins, the first gate electrode, the first gate insulating layer, and the first source/drain regions constitute a PMOS transistor; and
a second gate electrode extending longitudinally across the second fins in a widthwise direction of the second trench, a second gate insulating layer interposed between the second gate electrode and the second fins, and second source/drain regions in the second trench at opposite ends of the second fins, wherein the second fins, the second gate electrode, the second gate insulating layer, and the second source/drain regions constitute a NMOS transistor;
wherein the PMOS transistor and the NMOS transistor are connected in a CMOS configuration.

Assignees

• Cantoro Mirco
• Kwon Taeyong
• Kim Sangsu
• Lee Jae-Hwan
• Samsung Electronics Co Ltd

Inventors

• Cantoro Mirco
• Kwon Taeyong
• Kim Sangsu
• Lee Jae-Hwan

Classifications

• H10D30/798

  being provided in or under the channel regions · CPC title

• H10D84/853 Primary

  comprising FinFETs · CPC title

• H10D30/62 Primary

  Fin field-effect transistors [FinFET] · CPC title

• H10D86/011

  comprising FinFETs · CPC title

• H10D84/834

  comprising FinFETs · CPC title