Methods of fabricating memory devices having charged species

Patent metadata

Field	Value
Publication number	US-9318321-B2
Application number	US-201514588659-A
Country	US
Kind code	B2
Filing date	Jan 2, 2015
Priority date	Jul 2, 2010
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

Methods for fabricating memory devices having charged species. In one such method, a dielectric material is formed adjacent to a semiconductor. A charged species is introduced into the dielectric material, wherein the charged species has an energy barrier in a range of greater than about 0.5 eV to about 3.0 eV. A control gate is formed adjacent to the dielectric material.

First claim

What is claimed is:

1. A method for fabricating memory device, the method comprising:
forming a dielectric material adjacent to a semiconductor;
introducing a charged species into the dielectric material wherein the charged species has an activation energy of diffusion within the dielectric material in a range of greater than about 0.5 eV to about 3.0 eV; and
forming a control gate adjacent to the dielectric material.

2. The method of claim 1 , wherein introducing the charged species is performed during formation of the dielectric material.

3. The method of claim 1 , wherein introducing the charged species comprises immersing the semiconductor into an alkali solution.

4. The method of claim 3 , wherein the semiconductor is immersed in a solution of one of Ca(OH) 2 or MgCl 2 +Mg(OH) 2 dissolved in deionized water.

5. The method of claim 1 , wherein introducing the charged species is performed after forming the dielectric material.

6. The method of claim 1 , wherein introducing the charged species is performed by contacting dielectric material with an alkali solution.

7. The method of claim 1 , wherein introducing the charged species is performed prior to formation of the dielectric material.

8. The method of claim 1 , wherein the charged species is a non-hydrogenous ion.

9. The method of claim 1 , wherein the charged species has an activation energy of diffusion greater than or equal to about 0.8 eV.

10. The method of claim 1 , wherein introducing a charged species comprises introducing a charged species selected from the group consisting of a cation and an anion.

11. The method of claim 1 , wherein introducing a charged species into the dielectric material comprises introducing a charged species having an activation energy of diffusion within the dielectric material of greater than hydrogen in the dielectric material.

12. A method for fabricating memory device, the method comprising:
forming a dielectric material adjacent to a semiconductor;
introducing a non-hydrogenous ion into the dielectric material wherein the non-hydrogenous ion has an activation energy of diffusion within the dielectric material in a range of greater than about 0.5 eV to about 3.0 eV; and
forming a control gate adjacent to the dielectric material.

13. The method of claim 12 , wherein the non-hydrogenous ion has an activation energy of diffusion within the dielectric material greater than or equal to about 0.8 eV.

14. The method of claim 12 , wherein introducing a non-hydrogenous ion comprises introducing a non-hydrogenous ion selected from the group consisting of a cation and an anion.

15. The method of claim 12 , wherein forming a dielectric material comprises forming a dielectric oxide.

16. The method of claim 12 , wherein introducing a non-hydrogenous ion into the dielectric material comprises introducing the non-hydrogenous ion during formation of the dielectric material.

17. The method of claim 16 , wherein introducing the non-hydrogenous ion during formation of the dielectric material comprises contacting the semiconductor with an alkali solution prior to forming the dielectric material.

18. A method for fabricating memory device, the method comprising:
forming a dielectric material adjacent to a semiconductor;
introducing a non-hydrogenous ion into the dielectric material by contacting the dielectric material with an alkali solution containing the non-hydrogenous ion, wherein the non-hydrogenous ion has an activation energy of diffusion within the dielectric material in a range of greater than about 0.5 eV to about 3.0 eV; and
forming a control gate adjacent to the dielectric material.

19. The method of claim 18 , wherein introducing a non-hydrogenous ion comprises introducing a non-hydrogenous ion selected from the group consisting of a non-hydrogenous cation and a non-hydrogenous anion.

20. The method of claim 18 , wherein contacting the dielectric material with an alkali solution containing the non-hydrogenous ion comprises contacting the dielectric material with an aqueous solution selected from the group consisting of an aqueous solution of calcium hydroxide and an aqueous solution of magnesium chloride+magnesium hydroxide.

Assignees

• Micron Technology Inc

Inventors

• Meade Roy

Classifications

• H10P95/80

  Electrical treatments, e.g. for electroforming · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title

• H10D64/01338

  with a treatment, e.g. annealing, after the formation of the conductor · CPC title

• H10P14/6516 Primary

  of treatments performed after formation of the materials · CPC title

• H10D30/60

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title