Faceted, germanium slotted waveguide

Patent metadata

Field	Value
Publication number	US-9316790-B2
Application number	US-201514734666-A
Country	US
Kind code	B2
Filing date	Jun 9, 2015
Priority date	Oct 7, 2011
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

A waveguide having a substrate, a first germanium sidewall and a second germanium sidewall. The waveguide is formed by growing the first germanium sidewall and second germanium sidewall on the substrate.

First claim

What is claimed is:

1. A method for manufacturing a waveguide, comprising:
providing a substrate;
depositing a protective layer onto the substrate;
removing a portion of the protective layer from the substrate to expose a plurality of areas on the surface of the substrate;
growing a first quality of germanium in a first area on the surface of the substrate to form a first sidewall having a uniform slope; and
growing a second quality of germanium in a second area on the surface of the substrate to form a second sidewall having a uniform slope, wherein the first sidewall, the second sidewall, and the top of the protective layer define the waveguide.

2. The method of claim 1 , wherein the waveguide comprises a plurality of slots with trapezoidal sections.

3. The method of claim 1 , wherein the protective layer comprises an oxide.

4. The method of claim 1 , wherein the substrate comprises silicon.

5. The method of claim 1 , wherein the substrate of the sidewall is smooth.

6. The method of claim 1 , wherein the waveguides have a uniform depth.

7. The method of claim 1 , wherein the step of growing germanium comprises growing crystal line germanium.

8. The method of claim 1 , further comprising forming an intrinsic germanium seed layer.

9. The method of claim 1 , further comprising forming a doped germanium seed layer.

Assignees

• Bae Sys Inf & Elect Sys Integ

Inventors

• Kamocsai Robert L
• Vu Vu A

Classifications

• G02B2006/12061

  Silicon · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title

• G02B6/122

  Basic optical elements, e.g. light-guiding paths · CPC title

• G02B6/131 Primary

  by using epitaxial growth (epitaxial growth for semiconductors H10P14/20) · CPC title