Optical interconnection device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9341776-B2
Application number	US-201313960388-A
Country	US
Kind code	B2
Filing date	Aug 6, 2013
Priority date	Aug 9, 2012
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

An optical interconnection device includes a light-emitting element, a light-receiving element, and an optical waveguide. Both the light-emitting element and the light-receiving element have a layered structure and are formed on a silicon substrate. At least a portion of the light-emitting element is embedded in an insulator. At least a portion of the light-receiving element is embedded in the insulator. The optical waveguide is formed over the insulator, and is optically coupled to the light-emitting element and the light-receiving element by distributed coupling.

First claim

What is claimed is:

1. An optical interconnection device, comprising:
a ring-shaped light-emitting element and a disk-shaped light-receiving element, both with the ring-shaped light-emitting element and the disk-shaped light-receiving element having at least a portion with a same layered structure and being formed on a silicon substrate, at least a portion of the ring-shaped light-emitting element being embedded in an insulator, at least a portion of the disk-shaped light-receiving element being embedded in the insulator; and
an optical waveguide being formed over the insulator, the optical waveguide being optically coupled to the ring-shaped light-emitting element and the disk-shaped light-receiving element by distributed coupling,
wherein at least a part of the optical waveguide which is optically coupled to the disc-shaped light-receiving element consists of amorphous silicon and is in a spiral,
the ring-shaped light-emitting element includes an active layer,
the disc-shaped light-receiving element includes a light-absorbing layer, and
the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element are in the portion with the same layered structure and at a same height above the silicon substrate.

2. The device according to claim 1 , wherein a layer is formed between the silicon substrate and both the ring-shaped light-emitting and the disk-shaped light-receiving elements, the layer including at least one selected from the group consisting of metal, amorphous silicon, and polycrystalline silicon.

3. The device according to claim 2 , wherein the ring-shaped light-emitting and disk-shaped light-receiving elements include compound semiconductors.

4. The device according to claim 1 , wherein an electronic circuit for driving the ring-shaped light-emitting and the disk-shaped light-receiving elements is formed in the silicon substrate.

5. The device according to claim 1 , wherein at least a portion of the waveguide coupled to the ring-shaped light-emitting and the disk-shaped light-receiving elements is coupled to a waveguide including a dielectric or organic material.

6. The device according to claim 1 , wherein the optical waveguide consists of amorphous silicon.

7. The device according to claim 1 , wherein the optical waveguide is formed over the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element.

8. An optical interconnection device, comprising:
an electric circuit and metal interconnections, both being formed in a silicon substrate, a portion of the metal interconnections being in contact with the silicon substrate without being electrically connected to the electric circuit;
a ring-shaped light-emitting element and a disk-shaped light-receiving element, both having a layered structure and being formed over the metal interconnections, at least a portion of the ring-shaped light-emitting element being embedded in an insulator, at least a portion of the disk-shaped light-receiving element being embedded in the insulator; and
an optical waveguide being formed over the insulator, the optical waveguide being optically coupled to the ring-shaped light-emitting element and the disk-shaped light-receiving element by distributed coupling,
wherein at least a part of the optical waveguide which is optically coupled to the disc-shaped light-receiving element consists of amorphous silicon and is in a spiral,
the ring-shaped light-emitting element includes an active layer,
the disc-shaped light-receiving element includes a light-absorbing layer, and
the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element are at a same height above the silicon substrate.

9. The device according to claim 8 , wherein the optical waveguide consists of amorphous silicon.

10. The device according to claim 8 , wherein the optical waveguide is formed over the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element.

11. A method of manufacturing an optical interconnection device, the method comprising:
bonding an epitaxially grown layer formed on a semiconductor substrate to a silicon substrate, the epitaxially grown layer being included in a ring-shaped light-emitting element and a disk-shaped light-receiving element;
removing the semiconductor substrate;
forming the ring-shaped light-emitting element and the disk-shaped light-receiving element;
forming a first insulator layer over both the ring-shaped light-emitting element and the disk-shaped light-receiving element;
planarizing the first insulator layer by polishing;
forming an optical waveguide on the polished first insulator;
covering the optical waveguide with a second insulator layer; and
providing electrical interconnections to the ring-shaped light-emitting element and the disk-shaped light-receiving element,
wherein at least a part of the optical waveguide which is optically coupled to the disc-shaped light-receiving element consists of amorphous silicon and is in a spiral,
the ring-shaped light-emitting element includes an active layer,
the disc-shaped light-receiving element includes a light-absorbing layer, and
the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element are at a same height above the silicon substrate.

12. The method according to claim 11 , further comprising:
depositing amorphous silicon or polycrystalline silicon over the epitaxially grown layer;
planarizing the amorphous silicon or the polycrystalline silicon by polishing; and
bonding a planarized surface of the amorphous silicon or the polycrystalline silicon to the silicon substrate.

13. The method according to claim 11 , further comprising:
forming an epitaxially grown layer;
forming a metal layer over the silicon substrate; and
bonding the epitaxially grown layer to the metal layer.

14. The method according to claim 11 , further comprising:
forming amorphous silicon or polycrystalline silicon over the epitaxially grown layer;
planarizing the amorphous silicon or the polycrystalline silicon by polishing;
forming a first metal film on a planarized surface of the amorphous silicon or the polycrystalline silicon;
forming a second metal film on the silicon substrate; and
bonding the planarized surface to the silicon substrate.

15. The method according to claim 11 , wherein the optical waveguide consists of amorphous silicon.

16. The device according to claim 11 , wherein the optical waveguide is formed over the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element.

17. A method of manufacturing an optical interconnection device,
the device including:
an electric circuit and metal interconnections, both being formed in a silicon substrate, a portion of the interconnections being in contact with the silicon substrate without being electrically connected to the electric circuit;
a ring-shaped light-emitting element and a light-receiving element, both having a layered structure including an epitaxially grown layer and being formed over the metal interconnections, at least a portion of the ring-shaped light-emitting element being embedded in an insulator, at least a portion of the ring-shaped light-receiving element being embedded in the insulator; and
an optical waveguide being formed over the insulato

Assignees

• Toshiba Kk

Inventors

• Iizuka Norio
• Ohira Kazuya
• Yoshida Haruhiko
• Ezaki Mizunori
• Furuyama Hideto
• Kobayashi Kentaro
• Uemura Hiroshi

Classifications

• H10F55/255

  formed in, or on, a common substrate · CPC title

• H01S5/0264

  for monitoring the laser-output · CPC title

• H01S5/1071

  Ring-lasers · CPC title

• G02B6/12002

  Three-dimensional structures · CPC title

• G02B6/12004

  Combinations of two or more optical elements · CPC title