Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
US9316751B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9316751-B2 |
| Application number | US-201314390798-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 15, 2013 |
| Priority date | Apr 30, 2012 |
| Publication date | Apr 19, 2016 |
| Grant date | Apr 19, 2016 |
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An imaging apparatus ( 400 ) includes a detector array ( 412 ) with at least one detector tile ( 418 ). The detector tile includes a photosensor array ( 422 ) with a two dimensional array of individual photosensitive detector pixels ( 424 ) located within a non-photosensitive area ( 426 ). The imaging apparatus also includes readout electronics ( 432 ) coupled to the photosensor array and including individual readout channel wells ( 602, 604 ) corresponding to the individual detector pixels. The imaging apparatus also includes an anti-aliasing filter ( 800 ) for a detector pixel that is located in at least one of a region of the photosensor array corresponding to the detector pixel or a region of the readout electronics corresponding to the detector pixel.
Opening claim text (preview).
The invention claimed is: 1. An imaging apparatus, comprising: a detector array with at least one detector tile, the detector tile, comprising: a photosensor array with a two dimensional array of individual photosensitive detector pixels located within a non-photosensitive area; readout electronics coupled to the photosensor array and including individual readout channel wells corresponding to the individual detector pixels; and an anti-aliasing filter for a detector pixel th…
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