Memory Device Having Oxygen Control Layers And Manufacturing Method Of Same
US-2015372228-A1 · Dec 24, 2015 · US
Memory cells
US9312480B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9312480-B2 |
| Application number | US-201414323839-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 3, 2014 |
| Priority date | May 4, 2012 |
| Publication date | Apr 12, 2016 |
| Grant date | Apr 12, 2016 |
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Abstract
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Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.
First claim
Opening claim text (preview).
We claim: 1. A memory cell, comprising: a data storage region between a pair of conductive structures; the data storage region comprising at least two physically different metal oxides having an interface therebetween and being configured to support a filament which provides resistive properties of the memory cell associated with a memory state, the data storage region having a thickness from a surface of the first conductive structure to a surface of the second conductive structu…
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Electricity · mapped topic
- H01L45/08Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9312480B2 cover?
- Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the …
- Who is the assignee on this patent?
- Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L45/08. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 12 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).