INAS/ALSB/GASB based type-II SL pin detector with P on N and N on P configurations

Patent metadata

Field	Value
Publication number	US-9312410-B2
Application number	US-201214411407-A
Country	US
Kind code	B2
Filing date	Jun 26, 2012
Priority date	Jun 26, 2012
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

Novel N-structured In As/Al Sb(Al Ga Sb)/Ga Sb based type-II SL pin detector with p on n and n on p configurations are given to detect light in the Mid Wavelength Infrared Range—MWIR with a cut-off wavelength of 5 μm. Better carrier confinements are performed by placing AlSb layers switching from InAs layers to Ga Sb layers successively in the growth direction throughout the SL pin diode where zero bias detectivity is improved as 6×10 13 A/Hz 1/2 at a wavelength of 4.2 μm at 79K. RoA value is measured as 1.8×10 6 Ωcm 2 which is better than nBn devices. Dark current density is also obtained in the range of 4-7×10 −7 A/cm at zero bias and Vb=0.3V respectively at 79K.

First claim

The invention claimed is:

1. A novel N-structured InAs/AlSb/GaSb infrared detector structure to be used as a pixel comprising:
at least one GaSb buffer layer residing on top of a GaSb substrate;
at least one lattice matched AlGaAsSb buffer layer residing on top of GaSb buffer layer;
at least one Be doped p-type GaSb bottom contact layer residing on top of AlGaAsSb buffer layer;
a plurality of sets of InAs/AlSb/GaSb superlattice layers;
at least one p-type layer;
at least one n-type layer; and
at least one active region residing on top of a GaSb bottom contact layer.

2. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 1 , further comprising at least one capping layer placed on a very top of the structure.

3. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 2 , wherein the thickness of the capping layer ranges from 15 to 25 nm.

4. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 2 , wherein the thickness of the capping layer ranges from 40 to 50 nm.

5. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 2 , wherein the capping layer is Te(Si)-doped (n=4×10 17 -6×10 17 cm −3 ) n-InAs.

6. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 2 , wherein the capping layer is Be-doped (p=7×10 17 -9×10 17 cm −3 ) p-GaSb.

7. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 1 , wherein the thickness of the GaSb buffer layer is 90-110 nm.

8. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 1 , wherein the thickness of the AlGaAsSb buffer layer ranges from 15 to 25 nm.

9. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 8 , wherein the AlGaAsSb buffer layer is in the composition range Al 0.4-0.6 Ga 0.4-0.6 As 0.03-0.05 Sb 0.95-0.97 .

10. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 1 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprising between 80 to 100 periods of p-type layer ( 61 ).

11. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers further comprises an active layer consisting of 0.5-1.5 MLs InSb/8-11 MLs i-InAs/1.5-2.5 MLs AlSb(Al 0.7-1 Ga 0.0-0.3 Sb)/6-9 MLs i-GaSb type-II SL.

12. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein the InAs/AlSb/GaSb superlattice layers comprise between 80 to 900 periods of i-intrinsic active layer.

13. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise an n-type layer which is on the top.

14. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise a p-type layer which is on the bottom.

15. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise an n-type layer which is on the bottom.

16. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise a p-type layer which is on the top.

17. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise a p-type layer ( 61 ) consisting of 0.5-1.5 MLs InSb/8-11 MLs i-InAs/1.5-2.5 MLs AlSb(Al 0.7-1 Ga 0.0-0.3 Sb)/6-9 MLs GaSb:Be (p=4×10 17 -6×10 17 cm −3 ) type-II SL.

18. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise 35 to 45 periods of n-type layer.

19. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise an n-type layer consisting of 0.5-1.5 ML InSb/8-11 ML n-InAs:Te(Si) (n=4×10 17 -6×10 17 cm −3 )/1.5-2.5 MLs AlSb(Al 0.7-1 Ga 0.0-0.3 Sb)/6-9 MLs i-GaSb type-II SL.

20. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise 55 to 65 periods of n-type layer.

21. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise a n-type layer consisting of 0.5-1.5 ML InSb/8-11 MLs n-InAs:Te(Si) (n=4×10 17 -6×10 17 cm −3 )/1.5-2.5 ML AlSb(Al 0.7-1 Ga 0.0-0.3 Sb)/6-9 ML i-GaSb type-II SL.

22. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein a plurality of InAs/AlSb/GaSb superlattice layers comprise a p-type layer consisting of 0.5-1.5 ML InSb/8-11 MLs i-InAs/1.5-2.5 ML AlSb(Al 0.7-1 Ga 0.0-0.3 Sb)/6-9 ML p-GaSb:Be (p=4×10 17 -6×10 17 cm −3 ) type-II SL.

23. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 1 , wherein the bottom contact layer thickness ranges from 900-1100 nm.

24. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 1 , wherein the GaSb substrate is an un-intentionally p-type doped GaSb.

25. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 23 , wherein the bottom contact layer is a 4×10 17 -6×10 17 cm −3 Be doped p-type GaSb.

26. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 1 , wherein a GaSb substrate is an n-type doped GaSb.

27. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 1 , wherein the thickness of the bottom contact layer ranges from 450 to 550 nm.

28. The novel N-structured InAs/AlSb/GaSb infrared detector structure of claim 10 , wherein the bottom contact layer is a Te(Si) doped (n=4×10 17 -6×10 17 cm −3 ) n-type InAs 0.88-0.90 Sb 0.10-0.11 .

Assignees

• Ergun Yuksel
• Hostut Mustafa
• Aselsan Elektronik Sanayi Ve Ticaret As

Inventors

• Ergun Yuksel
• Hostut Mustafa

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3422

  Antimonides · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title