Chemical mechanical polishing method and apparatus

Patent metadata

Field	Value
Publication number	US-9312142-B2
Application number	US-201414300705-A
Country	US
Kind code	B2
Filing date	Jun 10, 2014
Priority date	Jun 10, 2014
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

Methods for polishing a semiconductor wafer using a pad resurfacing arm and an apparatus therefor are disclosed. Embodiments may include providing a semiconductor wafer on a chemical mechanical polishing (CMP) tool, the CMP tool including a polish pad and a pad resurfacing arm which includes a pad cleaning part, a pad conditioning part, and a slurry dispensing part, dispensing a slurry to the polish pad utilizing the pad resurfacing arm, and polishing the semiconductor wafer utilizing the polish pad.

First claim

What is claimed is:

1. A method comprising:
providing a semiconductor wafer on a chemical mechanical polishing (CMP) tool, the CMP tool comprising:
a polish pad, and
a pad resurfacing arm having a cylindrical or conical shape with a length extending from an outer periphery of the polish pad and across a center of the polish pad, the pad resurfacing arm comprising:
a pad cleaning part,
a pad conditioning part, and
a slurry dispensing part;

dispensing a slurry to the polish pad utilizing the pad resurfacing arm; and
polishing the semiconductor wafer utilizing the polish pad by rotating the pad resurfacing arm.

2. The method according to claim 1 , further comprising:
conditioning the polish pad, utilizing the pad resurfacing arm.

3. The method according to claim 1 , further comprising:
cleaning the polish pad, utilizing the pad resurfacing arm.

4. The method according to claim 1 , further comprising:
conditioning the polish pad, utilizing the pad resurfacing arm; and
cleaning the polish pad, utilizing the pad resurfacing arm.

5. The method according to claim 1 , wherein utilizing the pad resurfacing arm comprises sliding the pad resurfacing arm on the polish pad.

6. The method according to claim 1 , wherein the pad resurfacing arm comprises guides of a plastic material.

7. The method according to claim 1 , wherein utilizing the pad resurfacing arm comprises applying different levels of force to the polish pad from different locations of the pad resurfacing arm.

8. A method comprising:
providing a semiconductor wafer on a chemical mechanical polishing (CMP) tool, the CMP tool comprising:
a polish pad, and
a cylindrical pad resurfacing arm comprising guides of a plastic material and having a length extending from an outer periphery of the polish pad and across a center of the polish pad, the pad resurfacing arm further comprising:
a pad cleaning part,
a pad conditioning part, and
a slurry dispensing part;

cleaning the polish pad, utilizing the pad resurfacing arm;
conditioning the polish pad, utilizing the pad resurfacing arm;
dispensing a slurry to the polish pad, utilizing the pad resurfacing arm; and
polishing the semiconductor wafer, utilizing the polish pad,
wherein utilizing the pad resurfacing arm comprises:
vertically rotating the pad resurfacing arm,
sliding the pad resurfacing arm on the polish pad, and
applying different levels of force to the polish pad from different locations of the pad resurfacing arm.

Assignees

• Globalfoundries Inc

Inventors

• Kramer Jens

Classifications

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/0422

  for wet etching · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• B24B57/02

  for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents · CPC title

• B24B53/017 Primary

  Devices or means for dressing, cleaning or otherwise conditioning lapping tools · CPC title