Method for producing semiconductor apparatus substrate

Patent metadata

Field	Value
Publication number	US-9312127-B2
Application number	US-201514817797-A
Country	US
Kind code	B2
Filing date	Aug 4, 2015
Priority date	Sep 1, 2014
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid.

First claim

What is claimed is:

1. A method for producing a semiconductor apparatus substrate comprising the steps of:
(1) forming an organic under layer film on a substrate to be processed for producing a semiconductor apparatus, and applying a composition for forming a silicon-containing film on the organic under layer film, followed by heating, to form a silicon-containing film having a silicon content of 1% by mass or more and 30% by mass or less;
(2) applying a resist composition on the silicon-containing film to form a resist film, the resist composition containing a polymer whose polarity is changed by an acid action to change solubility thereof in a developer;
(3) forming a resist pattern by exposing and developing the resist film;
(4) transferring the pattern to the silicon-containing film by dry etching using the resist pattern as a dry etching mask;
(5) transferring the pattern to the organic under layer film by dry etching using the silicon-containing film to which the pattern has been transferred as a dry etching mask, to leave a part of or all of the silicon-containing film after the pattern transferring, on the organic under layer film to which the pattern has been transferred;
(6) implanting ions into the substrate to be processed for producing a semiconductor apparatus using the organic under layer film to which the pattern has been transferred as a mask; and
(7) peeling the organic under layer film used as the mask for ion implantation on which a part of or all of the silicon-containing film remains, with a peeling liquid.

2. The method for producing a semiconductor apparatus substrate according to claim 1 , wherein in the step (6), ions are implanted into the substrate to be processed for producing a semiconductor apparatus using the pattern formed from a part of or all of the silicon-containing film and the organic under layer film as a mask.

3. The method for producing a semiconductor apparatus substrate according to claim 1 , wherein in the step (7), the organic under layer film used as the mask for ion implantation on which a part of or all of the silicon-containing film remains is peeled with the peeling liquid at a time.

4. The method for producing a semiconductor apparatus substrate according to claim 2 , wherein in the step (7), the organic under layer film used as the mask for ion implantation on which a part of or all of the silicon-containing film remains is peeled with the peeling liquid at a time.

5. The method for producing a semiconductor apparatus substrate according to claim 1 , wherein the peeling liquid contains hydrogen peroxide.

6. The method for producing a semiconductor apparatus substrate according to claim 1 , wherein the peeling liquid contains sulfuric acid.

7. The method for producing a semiconductor apparatus substrate according to claim 1 , wherein in the step (7), the treatment with the peeling liquid is followed by peeling with another peeling liquid containing fluorine ions.

8. The method for producing a semiconductor apparatus substrate according to claim 1 , wherein in the step (7), the treatment with the peeling liquid is followed by cleaning with a cleaning liquid containing ammonia.

9. The method for producing a semiconductor apparatus substrate according to claim 1 , wherein the substrate to be processed for producing a semiconductor apparatus is a semiconductor apparatus substrate on which a part of or all of semiconductor circuit is formed or a material in which any of a metal film, an amorphous metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film is formed on the semiconductor apparatus substrate.

10. The method for producing a semiconductor apparatus substrate according to claim 9 , wherein the metal comprises silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum, or an alloy of these metals.

11. The method for producing a semiconductor apparatus substrate according to claim 1 , wherein the ion implanted is any of boron, phosphorus, arsenic, carbon, nitrogen, oxygen, fluorine, argon, silicon, gallium, germanium, indium, and antimony.

12. The method for producing a semiconductor apparatus substrate according to claim 1 , wherein the composition for forming a silicon-containing film contains at least a polysiloxane and a solvent.

13. The method for producing a semiconductor apparatus substrate according to claim 2 , wherein the composition for forming a silicon-containing film contains at least a polysiloxane and a solvent.

14. The method for producing a semiconductor apparatus substrate according to claim 12 , wherein the polysiloxane contains a crosslinkable organic group.

15. The method for producing a semiconductor apparatus substrate according to claim 14 , wherein the crosslinkable organic group is any of an epoxy group, a phenol group, and a naphthol group.

16. The method for producing a semiconductor apparatus substrate according to claim 12 , wherein the polysiloxane contains a halogenated organic group.

17. The method for producing a semiconductor apparatus substrate according to claim 16 , wherein halogen in the halogenated organic group is fluorine or chlorine.

18. The method for producing a semiconductor apparatus substrate according to claim 12 , wherein the composition for forming a silicon-containing film further contains an acid generator which generates an acid by an action of heat, light, or both.

19. The method for producing a semiconductor apparatus substrate according to claim 12 , wherein the composition for forming a silicon-containing film further contains an organic compound containing fluorine.

20. The method for producing a semiconductor apparatus substrate according to claim 12 , wherein the composition for forming a silicon-containing film further contains a crosslinker.

Assignees

• Shinetsu Chemical Co

Inventors

• Ogihara Tsutomu
• Kori Daisuke
• Taneda Yoshinori
• Biyajima Yusuke
• Kikuchi Rie
• Tachibana Seiichiro

Classifications

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P30/22

  using masks · CPC title