Rinse liquid for insulating film and method of rinsing insulating film

Patent metadata

Field	Value
Publication number	US-9312122-B2
Application number	US-201314090003-A
Country	US
Kind code	B2
Filing date	Nov 26, 2013
Priority date	Apr 18, 2013
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:

First claim

What is claimed is:

1. A rinse liquid for an insulation layer, the rinse liquid comprising:
a solvent represented by the following Chemical Formula 1; and
an auxiliary solvent, the auxiliary solvent including paraffin, or a derivative thereof, having a boiling point of about 190° C. to about 220° C. at atmospheric pressure,

wherein, in the Chemical Formula 1,
R 1 is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C5 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted carbonyl group, or a combination thereof, and
R a to R e are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C5 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted carbonyl group, a hydroxy group, a halogen, or a combination thereof.

2. The rinse liquid as claimed in claim 1 , wherein the solvent represented by Chemical Formula 1 is methyl benzoate, ethyl benzoate, propyl benzoate, isopropyl benzoate, butyl benzoate, benzyl benzoate, or a mixture thereof.

3. The rinse liquid as claimed in claim 1 , wherein the solvent includes a single solvent represented by Chemical Formula 1 or a mixture of two or more solvents represented by Chemical Formula 1.

4. The rinse liquid as claimed in claim 1 , wherein the rinse liquid comprises about 50 or less particulates of greater than or equal to about 0.5 μm in 1 ml of the rinse liquid.

5. The rinse liquid as claimed in claim 1 , wherein the rinse liquid comprises about 200 or less particulates of greater than or equal to about 0.2 μm in 1 ml of the rinse liquid.

6. The rinse liquid as claimed in claim 1 , wherein the rinse liquid has a moisture content of about 150 ppm or less.

7. A method of rinsing an insulation layer, the method comprising:
applying an insulation layer onto a substrate; and
supplying the rinse liquid as claimed in claim 1 to a front part, a rear part, an edge part, or a combination thereof, of the insulation layer.

8. A method of fabricating a semiconductor device, the method comprising:
applying an insulation layer onto a semiconductor substrate, the insulation layer including polysilazane, polysiloxazane, or a combination thereof; and
rinsing the insulation layer using the rinse liquid as claimed in claim 1 .

9. The method as claimed in claim 8 , further comprising, after rinsing the insulation layer using the rinse liquid, heat treating the semiconductor substrate to convert the polysilazane, polysiloxazane, or combination thereof, to silica.

10. The method as claimed in claim 8 , wherein the insulation layer forms a dielectric layer of a capacitor.

11. The method as claimed in claim 10 , wherein the semiconductor device includes a DRAM, and the capacitor is included in a memory cell of the DRAM.

Assignees

• Bae Jin-Hee
• Lee Han-Song
• Lim Wan-Hee
• Kim Go-Un
• Kwak Taek-Soo
• Kim Bo-Sun
• Kim Sang-Kyun
• Na Yoong-Hee
• Park Eun-Su
• Seo Jin-Woo
• Song Hyun-Ji
• Cho Youn-Jin
• Han Kwen-Woo
• Hwang Byeong-Gyu
• Cheil Ind Inc

Inventors

• Bae Jin-Hee
• Lee Han-Song
• Lim Wan-Hee
• Kim Go-Un
• Kwak Taek-Soo
• Kim Bo-Sun
• Kim Sang-Kyun
• Na Yoong-Hee
• Park Eun-Su
• Seo Jin-Woo
• Song Hyun-Ji
• Cho Youn-Jin
• Han Kwen-Woo
• Hwang Byeong-Gyu

Classifications

• H10P70/56

  Cleaning of wafer backside · CPC title

• H10P70/54

  Cleaning of wafer edges · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6684

  the compound comprising silicon and oxygen · CPC title