Composition for tungsten buffing

Patent metadata

Field	Value
Publication number	US-9309442-B2
Application number	US-201414222086-A
Country	US
Kind code	B2
Filing date	Mar 21, 2014
Priority date	Mar 21, 2014
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.

First claim

What is claimed is:

1. A chemical mechanic polishing composition comprising:
a water based liquid carrier;
colloidal silica abrasive particles dispersed in the liquid carrier, wherein 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles, the colloidal silica abrasive particles having a permanent positive charge of at least 6 mV;
an iron containing accelerator; and
an oxidizer.

2. The composition of claim 1 , wherein the iron containing accelerator comprises a soluble iron containing catalyst.

3. The composition of claim 2 further comprising a stabilizer bound to the soluble iron containing catalyst, the stabilizer being selected from the group consisting of phosphoric acid, acetic acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof.

4. The composition of claim 1 , wherein the oxidizer comprises hydrogen peroxide.

5. The composition of claim 1 , having a pH in a range from about 3 to about 4.

6. The composition of claim 1 , having an electrical conductivity of less than 1000 μS/cm.

7. The composition of claim 1 , having an electrical conductivity of less than 600 μS/cm.

8. The composition of claim 1 , wherein the colloidal silica abrasive particles have a mean particle size in a range from about 40 nm to about 70 nm.

9. The composition of claim 1 , wherein the colloidal silica abrasive particles have a mean particle size in a range from about 45 nm to about 65 nm.

10. The composition of claim 1 , comprising from about 1 weight percent to about 4 weight percent of the colloidal silica abrasive particles.

11. The composition of claim 1 , further comprising an amine compound in solution in the liquid carrier.

12. The composition of claim 1 , wherein:
the composition has a pH in a range from about 3 to about 4,
the composition has an electrical conductivity of less than 1000 μS/cm,
the composition has from about 1 weight percent to about 4 weight percent of the colloidal silica abrasive particles; and
the colloidal silica abrasive particles have a mean particle size in a range from about 40 nm to about 70 nm.

13. A chemical mechanic polishing composition comprising:
a water based liquid carrier;
colloidal silica abrasive particles dispersed in the liquid carrier, the colloidal silica abrasive particles having a permanent positive charge of at least 6 mV, wherein 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles; and
an oxidizer;
wherein the polishing composition includes from about 1 weight percent to about 4 weight percent of the colloidal silica abrasive particles.

14. The composition of claim 13 , wherein the oxidizer comprises hydrogen peroxide.

15. The composition of claim 13 , having a pH in a range from about 3 to about 4.

16. The composition of claim 13 , having an electrical conductivity of less than 1000 μS/cm.

17. The composition of claim 13 , having an electrical conductivity of less than 600 μS/cm.

18. The composition of claim 13 , wherein the colloidal silica abrasive particles have a mean particle size in a range from about 40 nm to about 70 nm.

19. The composition of claim 13 , wherein the colloidal silica abrasive particles have a mean particle size in a range from about 45 nm to about 65 nm.

20. The composition of claim 13 , further comprising an amine compound in solution in the liquid carrier.

21. A method of chemical mechanical polishing a substrate including tungsten and silicon dioxide layers, the method comprising:
(a) contacting the substrate with a polishing composition comprising:
(i) a water based liquid carrier;
(ii) colloidal silica abrasive particles dispersed in the liquid carrier, wherein 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles, the colloidal silica abrasive particles having a permanent positive charge of at least 6 mV;
(iii) an iron containing accelerator; and
(iv) an oxidizer;

(b) moving the polishing composition relative to the substrate; and
(c) abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

22. The method of claim 21 , wherein a rate of removal of silicon dioxide in (c) is greater than or equal to a rate of removal of tungsten in (c).

23. The method of claim 21 , wherein the polishing composition has a pH in a range from about 3 to about 4.

24. The method of claim 21 , wherein the polishing composition has an electrical conductivity of less than 1000 μS/cm.

25. The method of claim 21 , wherein the colloidal silica abrasive particles in the polishing composition have a mean particle size in a range from about 45 nm to about 65 nm.

Assignees

• Cabot Microelectronics Corp

Inventors

• Fu Lin
• Dysard Jeffrey
• Grumbine Steven

Classifications

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C23F3/06

  with acidic solutions · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• B01J23/745

  Iron · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title