Substrate cleaning method, substrate cleaning apparatus and storage medium for cleaning substrate

Patent metadata

Field	Value
Publication number	US-9307653-B2
Application number	US-201313733370-A
Country	US
Kind code	B2
Filing date	Jan 3, 2013
Priority date	Jan 5, 2012
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A substrate cleaning method is capable of preventing a liquid stream on a substrate from being cut and circuit patterns thereon from being damaged. The substrate cleaning method includes a liquid film forming process that forms a liquid film on an entire substrate surface by supplying a cleaning liquid L from a central portion of the substrate W toward a peripheral portion thereof while rotating the substrate; a drying region forming process that discharges a gas G on the substrate surface and removes the cleaning liquid on the substrate surface; and a residual liquid removing process that removes the cleaning liquid remaining between the circuit patterns by discharging a gas G while moving in a diametrical direction of the substrate.

First claim

What is claimed is:

1. A substrate cleaning method for cleaning a surface of a substrate on which circuit patterns are formed, the substrate cleaning method comprising:
a liquid film forming process that forms a liquid film on an entire surface of the substrate by supplying a cleaning liquid from a central portion of the substrate toward a peripheral portion thereof while horizontally holding the substrate and rotating the substrate about a central axis of the substrate;
a first drying process that forms a drying region by discharging a gas from a gas nozzle onto the surface of the substrate from the central portion of the substrate toward the peripheral portion thereof after supplying the cleaning liquid and by removing the cleaning liquid on the surface of the substrate, while rotating the substrate; and
a second drying process that removes the cleaning liquid remaining between the circuit patterns in the drying region after the first drying process by a residual liquid removing device that moves in a diametrical direction of the substrate independently from the gas nozzle, while rotating the substrate,
wherein a residual liquid removing position of the residual liquid removing device in the second drying process is located to be spaced apart from a gas discharge position in the first drying process by a distance no smaller than a unit exposure region for forming the circuit patterns in order to suppress non-uniform distribution of the cleaning liquid remaining between the circuit patterns, and
said unit exposure region is a region to which light is irradiated through one time exposure by an exposure apparatus.

2. The substrate cleaning method of claim 1 ,
wherein in the first drying process, a moving speed of a gas discharge position is set to be equal to or larger than a preset value in order to suppress non-uniform distribution of the cleaning liquid remaining between the circuit patterns.

3. The substrate cleaning method of claim 1 ,
wherein as a supply position of the cleaning liquid approaches the peripheral portion of the substrate, a rotation number of the substrate is reduced in order to control a linear velocity at the supply position of the cleaning liquid to be equal to or smaller than a predetermined value.

4. The substrate cleaning method of claim 1 ,
wherein between an end of the first drying process and a start of the second drying process, a product of a centrifugal force and a rotation time of the substrate is controlled at each of positions on the substrate in order to prevent damage of the circuit patterns.

5. The substrate cleaning method of claim 1 ,
wherein in the second drying process, the cleaning liquid remaining between the circuit patterns is removed by moving the residual liquid removing device from the central portion of the substrate to the peripheral portion thereof.

6. The substrate cleaning method of claim 1 ,
wherein in the second drying process, the cleaning liquid remaining between the circuit patterns is removed by moving the residual liquid removing device from the peripheral portion of the substrate toward the central portion thereof.

7. The substrate cleaning method of claim 1 ,
wherein in the second drying process, the cleaning liquid remaining between the circuit patterns is removed by discharging a gas onto the surface of the substrate.

8. The substrate cleaning method of claim 1 ,
wherein in the second drying process, the cleaning liquid remaining between the circuit patterns is removed by guiding and diffusing an air flow generated by rotating the substrate to the drying region through an air flow controller.

9. The substrate cleaning method of claim 1 ,
wherein in the second drying process, the cleaning liquid remaining between the circuit patterns is removed by being suctioned.

10. The substrate cleaning method of claim 1 ,
wherein in the second drying process, the cleaning liquid remaining between the circuit patterns is dried and removed by being heated.

11. The substrate cleaning method of claim 1 ,
wherein in the second drying process, the cleaning liquid remaining between the circuit patterns is removed by discharging an organic solvent onto the surface of the substrate and substituting the cleaning liquid between the circuit patterns with the organic solvent.

12. A computer-readable storage medium having stored thereon computer-executable instructions, in response to execution, causes a substrate cleaning apparatus to perform a substrate cleaning method as claimed in claim 1 ,
wherein the substrate cleaning apparatus is configured to clean a surface of a substrate on which circuit patterns are formed.

13. A substrate cleaning apparatus for cleaning a surface of a substrate on which circuit patterns are formed, the substrate cleaning apparatus comprising:
a substrate holder configured to hold thereon the substrate such that a central portion of the substrate is coincident with a rotation axis of the substrate holder;
a rotating device configured to rotate the substrate holder about the rotation axis thereof;
a cleaning liquid nozzle configured to supply a cleaning liquid onto the surface of the substrate held on the substrate holder;
a gas nozzle configured to discharge a gas onto the surface of the substrate held on the substrate holder;
a residual liquid removing device configured to remove the cleaning liquid remaining between the circuit patterns formed on the surface of the substrate held on the substrate holder;
a moving device configured to move the cleaning liquid nozzle, the gas nozzle and the residual liquid removing device; and
a controller configured to control the rotating device, the cleaning liquid nozzle, the gas nozzle, the residual liquid removing device and the moving device,
wherein, in response to a control signal from the controller, while rotating the substrate, the cleaning liquid is supplied from the cleaning liquid nozzle onto the surface of the substrate while the cleaning liquid nozzle is moved from the central portion of the substrate toward a peripheral portion thereof, and a liquid film is formed on an entire surface of the substrate;
after supplying the cleaning liquid, the gas is discharged from the gas nozzle onto the surface of the substrate while the gas nozzle is moved from the central portion of the substrate toward the peripheral portion thereof, and the cleaning liquid on the surface of the substrate is removed to form a drying region; and
the cleaning liquid remaining between the circuit patterns in the drying region is removed by moving the residual liquid removing device in a diametrical direction of the substrate independently from the gas nozzle,
wherein a residual liquid removing position of the residual liquid removing device is located to be spaced apart from a gas discharge position in the first drying process by a distance no smaller than a unit exposure region for forming the circuit patterns in order to suppress non-uniform distribution of the cleaning liquid remaining between the circuit patterns, and
said unit exposure region is a region to which light is irradiated through one time exposure by an exposure apparatus.

14. The substrate cleaning apparatus of claim 13 ,
wherein the residual liquid removing device is formed of a gas nozzle configured to discharge a gas onto the surface of the substrate.

15. The substrate cleaning apparatus of claim 13 ,
wherein the residual liquid removing device is formed of an air flow controller configured to guide and diffuse an air flow generated by the rotation of the substrate to the drying region.

16. The subs

Assignees

• Tokyo Electron Ltd

Inventors

• Yoshihara Kousuke
• Tanaka Keiichi
• Ichinomiya Hiroshi

Classifications

• H10P72/0408

  for drying · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title

• H01L21/67028

  Electricity · mapped topic

• B08B3/024

  Cleaning by means of spray elements moving over the surface to be cleaned · CPC title