Material including graphene and an inorganic material and method of manufacturing the material

Patent metadata

Field	Value
Publication number	US-9306099-B2
Application number	US-95696410-A
Country	US
Kind code	B2
Filing date	Nov 30, 2010
Priority date	Dec 1, 2009
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A material including: graphene; and an inorganic material having a crystal system, wherein a crystal plane of the inorganic material is oriented parallel to the (0001) plane of the graphene. The crystal plane of the inorganic material has an atomic arrangement of a hexagon, a tetragon, or a pentagon.

First claim

What is claimed is:

1. A material comprising:
a substrate;
graphene disposed on the substrate; and
an inorganic material having a crystal system and disposed on the graphene,
wherein at least one crystal plane of the inorganic material is oriented parallel to a (0001) plane of the graphene,
wherein the inorganic material is disposed directly on the graphene, and
wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about −10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene,
wherein the inorganic material comprises ZnO.

2. The material of claim 1 , wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.

3. The material of claim 1 , wherein the crystal system of the inorganic material is a hexagonal system.

4. The material of claim 2 , wherein the difference between the distance between the atoms at the first and third sites in the hexagon atomic arrangement of the inorganic material and the distance between the carbon atoms at first and fourth sites of the hexagonal repeating unit of the graphene is about 10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene.

5. The material of claim 2 , wherein a first axis between the first and third atoms of the hexagon atomic arrangement of the inorganic material and a second axis between the first and fourth atoms of the graphene are oriented in a substantially same direction.

6. The material of claim 1 , wherein the inorganic material is an epitaxial layer on the graphene.

7. The material of claim 1 , wherein the graphene has a sheet shape and an area of equal to or greater than 1 square millimeter.

8. An electrical device comprising the material of claim 1 .

9. A material comprising:
a substrate having a surface;
an inorganic material having a crystal system, wherein at least one crystal plane of the inorganic material is oriented to be parallel to the surface of the substrate; and
graphene interposed between the surface of the substrate and the inorganic material,
wherein at least one crystal plane of the inorganic material is oriented parallel to the (0001) plane of the graphene,
wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about −10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene,
wherein the inorganic material comprises ZnO.

10. The material of claim 9 , wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.

11. The material of claim 9 , wherein the crystal system of the inorganic material is a hexagonal system.

12. The material of claim 10 , wherein the difference between the distance between the atoms at the first and third sites in the hexagon atomic arrangement of the inorganic material and the distance between the carbon atoms at the first and fourth sites of a hexagonal repeating unit of the graphene is about 10 percent to about 20 percent of the distance between carbon atoms at first and fourth sites of the hexagonal repeating unit of the graphene.

13. The material of claim 10 , wherein a first axis between the first and third atoms of the hexagon atomic arrangement of the inorganic material and a second axis between the first and fourth atoms of the graphene are oriented in a substantially same direction.

14. The material of claim 9 , wherein the inorganic material is an epitaxial layer on the graphene.

Assignees

• Choi Jae-Young
• Choi Won-Mook
• Choi Duk-Hyun
• Kim Sang-Woo
• Shin Kyung-Sik
• Samsung Electronics Co Ltd
• Kumoh Nat Inst Tech Acad Coop

Inventors

• Choi Jae-Young
• Choi Won-Mook
• Choi Duk-Hyun
• Kim Sang-Woo
• Shin Kyung-Sik

Classifications

• H10F77/16

  Material structures, e.g. crystalline structures, film structures or crystal plane orientations · CPC title

• H10F77/1437 Primary

  Quantum wires or nanorods · CPC title

• Y10T428/30

  Self-sustaining carbon mass or layer with impregnant or other layer · CPC title

• C01B2204/00

  Structure or properties of graphene · CPC title

• C01B31/0438

  Chemistry & Metallurgy · mapped topic