Methods of forming replacement fins for a finfet semiconductor device by performing a replacement growth process
US-2015024573-A1 · Jan 22, 2015 · US
Isolation structure of fin field effect transistor
US9306069B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9306069-B2 |
| Application number | US-201314024148-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 11, 2013 |
| Priority date | Sep 11, 2013 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
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Abstract
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The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material, wherein a bottom portion of the upper portion comprises a dopant with a first peak concentration; a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and an isolation structure surrounding the fin structure, wherein a portion of the isolation structure adjacent to the bottom portion of the upper portion comprises the dopant with a second peak concentration equal to or greater than the first peak concentration.
First claim
Opening claim text (preview).
What is claimed is: 1. A fin field effect transistor (FinFET) comprising: a substrate comprising a major surface; a fin structure protruding from the major surface, the fin structure comprising: a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material, wherein a bottom portion of the upper portion comprises a dopant with a first peak concentration; and a middle portion between the…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9306069B2 cover?
- The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material, wherein a bottom portion of the upper portion c…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification H10D30/62. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).