Backside structure and method for BSI image sensors

US9305966B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9305966-B2
Application numberUS-201514609066-A
CountryUS
Kind codeB2
Filing dateJan 29, 2015
Priority dateMay 10, 2012
Publication dateApr 5, 2016
Grant dateApr 5, 2016

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Abstract

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BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

First claim

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What is claimed is: 1. A method of forming an image sensor, the method comprising: receiving a substrate having a sensor array region and a periphery region, the substrate having a front side surface and a back side surface; forming a plurality of metallization layers overlying the front side surface of the substrate; forming a bottom anti-reflective coating (BARC) layer over the back side surface of the substrate, the BARC layer having a first thickness over the sensor array…

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What does patent US9305966B2 cover?
BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectivel…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg
What technology area does this patent fall under?
Primary CPC classification E05B41/00. Mapped technology areas include Fixed Constructions.
When was this patent published?
Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).