Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications

Patent metadata

Field	Value
Publication number	US-9305806-B2
Application number	US-201514598472-A
Country	US
Kind code	B2
Filing date	Jan 16, 2015
Priority date	Jun 27, 2013
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.

First claim

The invention claimed is:

1. A method of chemical mechanical polishing a removal material of copper or copper-containing material from a surface of a semiconductor substrate comprising steps of:
a) providing a polishing pad;
b) providing a chemical mechanical polishing slurry composition comprising
1) from 0.0 wt % to 25 wt % abrasive;
2) from 0.01 wt % to 22 wt % chelating agent;
3) from 0.001 wt % to 0.15 wt % corrosion inhibitor;
4) from 0.0001 wt % to 0.50 wt % choline salt;
5) from 0.0001 wt % to 0.20 wt % organic amine;
6) from 0.01 wt % to 10 wt % oxidizer;
7) from 0.0001 wt % to 0.05 wt % biocide;
8) remaining is substantially liquid carrier;

wherein pH of the polishing slurry composition is between 5.0 to 8.0; and
the choline salt having a general molecular structure shown below:

wherein anion Y − is selected from the group consisting of bicarbonate, p-toluenesulfonate, bitartrate, and combinations thereof;
c) contacting the surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing slurry composition; and
d) polishing the surface of the semiconductor substrate;
wherein at least a portion of the surface that containing the removal material is in contact with both the polishing pad and the chemical mechanical polishing slurry composition.

2. The method of claim 1 , wherein the abrasive is selected from the group consisting of colloidal silica particles, alumina doped silica particles, colloidal aluminum oxide, colloidal and photoactive titanium dioxide, cerium oxide, colloidal cerium oxide, nano-sized diamond particles, nano-sized silicon nitride particles, mono-modal, bi-modal, multi-modal colloidal abrasive particles, zirconium oxide, organic polymer-based soft abrasives, surface-coated or modified abrasives, and mixtures thereof; the abrasive having narrow or broad particle size distributions, with various sizes and different shapes selected from the group consisting of spherical shape, cocoon shape, aggregate shape and combinations thereof; the chelating agent is selected from the group consisting of glycine, amino acids, and amino acid derivatives; the corrosion inhibitor is selected from the group consisting of triazole and its derivatives, benzene triazole and its derivatives; the organic amine compound agent is selected from the group consisting of ethylene diamine, propylene diamine, organic amine compounds containing multi amino groups in the same molecular framework; the oxidizer is selected from the group consisting of periodic acid, hydrogen peroxide, potassium iodate, potassium permanganate, ammonium persulfate, ammonium molybdate, ferric nitrate, nitric acid, potassium nitrate, and mixtures thereof; and the liquid carrier is water.

3. The method of claim 2 , wherein the triazole derivative is selected from the group consisting of amino-substituted triazole compounds, bi-amino-substituted triazole compounds, and mixtures thereof.

4. The method of claim 1 , wherein the chemical mechanical polishing slurry composition further comprising one selected from the group consisting of from 0.01 wt % to 0.5 wt % pH adjusting agent comprising inorganic or organic acids; from 0.00 wt % to 1.0 wt % surfactant; and combinations thereof; wherein:
the pH adjusting agent is selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, and mixtures thereof; and the surfactant is nonionic, anionic, cationic or amphoteric surfactant.

5. The method of claim 1 , wherein the chemical mechanical polishing slurry composition comprising nano-sized colloidal silica particles prepared from TMOS or TEOS; glycine; ethylenediamine, 3-amino-1,2,4-triazole, hydrogen peroxide; choline bicarbonate; and the pH is 6.5 to 7.5.

6. The method of claim 1 , wherein the semiconductor substrate further comprising one selected from the group consisting of Ta, TaN, Ti, TiN, Si and combinations thereof; and the chemical mechanical polishing slurry composition has polishing selectivity of Cu:Ta, Cu:TaN, Cu:Ti Cu:TiN and Cu:Si ranging from about 200 to about 5000.

7. A method of a selective chemical mechanical polishing comprising steps of:
a) providing a semiconductor substrate having a surface containing copper metal;
b) providing a polishing pad;
c) providing a chemical mechanical polishing slurry composition comprising
1) from 0.0 wt % to 25 wt % abrasive;
2) from 0.01 wt % to 22 wt % chelating agent;
3) from 0.001 wt % to 0.15 wt % corrosion inhibitor;
4) from 0.0001 wt % to 0.50 wt % choline salt;
5) from 0.0001 wt % to 0.20 wt % organic amine;
6) from 0.01 wt % to 10 wt % oxidizer;
7) from 0.0001 wt % to 0.05 wt % biocide;
8) remaining is substantially liquid carrier;
wherein pH of the polishing slurry composition is between 5.0 to 8.0; and
the choline salt having a general molecular structure shown below:

wherein anion Y − is selected from the group consisting of bicarbonate, p-toluenesulfonate, bitartrate, and combinations thereof;

d) contacting the surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing slurry composition; and
e) polishing the surface of the semiconductor substrate to selectively remove copper metal;
wherein at least a portion of the surface containing copper metal is in contact with both the polishing pad and the chemical mechanical polishing slurry composition.

8. The method of claim 7 , wherein the abrasive is selected from the group consisting of colloidal silica particles, alumina doped silica particles, colloidal aluminum oxide, colloidal and photoactive titanium dioxide, cerium oxide, colloidal cerium oxide, nano-sized diamond particles, nano-sized silicon nitride particles, mono-modal, bi-modal, multi-modal colloidal abrasive particles, zirconium oxide, organic polymer-based soft abrasives, surface-coated or modified abrasives, and mixtures thereof; the abrasive having narrow or broad particle size distributions, with various sizes and different shapes selected from the group consisting of spherical shape, cocoon shape, aggregate shape and combinations thereof; the chelating agent is selected from the group consisting of glycine, amino acids, and amino acid derivatives; the corrosion inhibitor is selected from the group consisting of triazole and its derivatives, benzene triazole and its derivatives; the organic amine compound agent is selected from the group consisting of ethylene diamine, propylene diamine, organic amine compounds containing multi amino groups in the same molecular framework; the oxidizer is selected from the group consisting of periodic acid, hydrogen peroxide, potassium iodate, potassium permanganate, ammonium persulfate, ammonium molybdate, ferric nitrate, nitric acid, potassium nitrate, and mixtures thereof; and the liquid carrier is water.

9. The method of claim 8 , wherein the triazole derivative is selected from the group consisting of amino-substituted triazole compounds, bi-amino-substituted triazole compounds, and mixtures thereof.

10. The method of claim 7 , wherein the chemical mechanical polishing slurry composition further comprising one selected from the group consisting of from 0.01 wt % to 0.5 wt % pH adjusting agent comprising inorganic or organic acids; from 0.00 wt % to 1.0 wt % surfactant; and combinations thereof; wherein:
the pH adjusting agent is selected from the group consisting of nitric acid, hydrochloric acid, sulfur

Assignees

• Air Prod & Chem

Inventors

• Shi Xiaobo
• Murella Krishna
• Schlueter James Allen
• Choo Jae Ouk

Classifications

• B24B1/00

  Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes · CPC title

• C09K3/1454 Primary

  Abrasive powders, suspensions and pastes for polishing · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09G1/04

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title