Adjusting current ratios in inductively coupled plasma processing systems

US9305750B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9305750-B2
Application numberUS-72811210-A
CountryUS
Kind codeB2
Filing dateMar 19, 2010
Priority dateJun 12, 2009
Publication dateApr 5, 2016
Grant dateApr 5, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.

First claim

Opening claim text (preview).

What is claimed is: 1. A plasma processing system for generating plasma, the plasma processing system comprising: a first coil configured to conduct a first current for sustaining at least a first portion of the plasma; a second coil configured to conduct a second current for sustaining at least a second portion of the plasma; a power source configured to power the first current and the second current, the power source being electrically coupled with the first coil and the second coil; and a first parallel circuit configured to adjust an amperage of the first current, the first parallel circuit being electrically coupled between the power source and the first coil, the first parallel circuit including at least a first inductor and a first variable capacitor, the first inductor and the first variable capacitor being electrically connected in parallel to each other, so that a first node joins first terminal ends of the first variable capacitor and the first inductor and a second node joins second terminal ends of the first variable capacitor and the first inductor, the first node being directly connected to the first coil and the second node being connected to the power source and the second coil, wherein the first variable capacitor is configured to adjust the amperage of the first current. 2. The plasma processing system of claim 1 , further comprising a cooler configured to cool the first parallel circuit. 3. The plasma processing system of claim 1 , further comprising: a third coil configured to conduct a third current for sustaining at least a third portion of the plasma, the power source being further configured for powering the third current; and a second parallel circuit configured to adjust the amperage of the third current, the second parallel circuit being electrically coupled between the power source and the third coil, the second parallel circuit including at least a second inductor and a second variable capacitor, the second inductor and the second variable capacitor being electrically connected in parallel to each other. 4. The plasma processing system of claim 3 , wherein the third coil surrounds the second coil, and the second coil surrounds the first coil. 5. The plasma processing system of claim 3 further comprising a third inductor coupled between the power source and the second coil and configured to reduce an amperage of the second current. 6. The plasma processing system of claim 5 , wherein the third coil surrounds the second coil, and the second coil surrounds the first coil. 7. The plasma processing system of claim 5 , wherein the third coil surrounds the first coil, and the first coil surrounds the second coil. 8. The plasma processing system of claim 5 , wherein the second coil surrounds the first coil, and the first coil surrounds the third coil. 9. The plasma processing system of claim 1 , further comprising a second inductor configured to reduce an amperage of the second current, the second inductor being electrically coupled between the power source and the second coil, wherein the first parallel circuit is not electrically coupled between the power source and the second coil. 10. A plasma processing system for generating plasma, the plasma processing system comprising: a first coil configured to conduct a first current for sustaining at least a first portion of the plasma; a second coil configured to conduct a second current for sustaining at least a second portion of the plasma; a power source configured to power the first current and the second current, the power source being electrically coupled with the first coil and the second coil; and a first parallel circuit configured to adjust an amperage of the first current, the first parallel circuit being electrically coupled between the power source and the first coil, the first parallel circuit including at least a first inductor and a first variable capacitor, the first inductor and the first variable capacitor being electrically connected in parallel to each other, so that a first node joins first terminal ends of the first variable capacitor and the first inductor and a second node joins second terminal ends of the first variable capacitor and the first inductor, the first node being directly connected to the first coil and the second node being connected to the power source, wherein the first variable capacitor is configured to adjust the amperage of the first current, wherein the first parallel circuit is configured to adjust the amperage of the first current and not the amperage of the second current, and the second coil surrounds the first coil, a second inductor electrically coupled between the second node and the second coil, wherein the second inductor is configured to reduce the amperage of the second current, wherein the second inductor is coupled to the second node. 11. A power splitter for adjusting a ratio of an amperage of a first current to an amperage of a second current in a plasma processing system, the plasma processing system including a first coil for conducting the first current for sustaining at least a first portion of a plasma, the plasma processing system further including a second coil for conducting the second current for sustaining at least a second portion of the plasma, the plasma processing system further including a power source for powering the first current and the second current, the power splitter comprising: a parallel inductor-capacitor circuit being coupled between the power source and the first coil, the parallel inductor-capacitor circuit including: a first inductor electrically coupled between the power source and the first coil; and a first variable capacitor electrically coupled between the power source and the first coil, the first inductor and the first variable capacitor being electrically connected in parallel, wherein a first node joins first terminal ends of the first variable capacitor and the first inductor and a second node joins second terminal ends of the first variable capacitor and the first inductor, the first node being directly connected to the first coil and the second node being connected to a matching network and to the second coil, wherein the first variable capacitor is configured to adjust an amperage of the first current. 12. The power splitter of claim 11 , further comprising a second inductor electrically coupled between the matching network and the second coil, wherein the second inductor is configured to reduce the amperage of the second current, the second inductor being electrically coupled between the power source and the second coil. 13. The power splitter of claim 11 , further comprising a second parallel inductor-capacitor circuit, the second parallel inductor-capacitor circuit being electrically coupled between the power source and a third coil of the plasma processing system, wherein the third coil is configured to adjust an amperage of a third current conducted by the third coil, the second parallel inductor-capacitor circuit including a second inductor and a second variable capacitor, the second inductor and the second variable capacitor being electrically connected in parallel to each other. 14. The power splitter of claim 13 , further comprising a third inductor for reducing the amperage of the second current, the third inductor being electrically coupled between the power source and the second coil.

Assignees

Inventors

Classifications

  • Circuits specially adapted for controlling the RF discharge · CPC title

  • Matching circuits · CPC title

  • using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title

  • Electricity · mapped topic

  • Antennas, e.g. particular shapes of coils · CPC title

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Frequently asked questions

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What does patent US9305750B2 cover?
A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system ma…
Who is the assignee on this patent?
Long Maolin, Jafarian-Tehrani Seyed Jafar, Lam Res Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/32174. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).