Precursors and methods for producing bismuth-oxy-carbide-based photoresist
US-2024210821-A1 · Jun 27, 2024 · US
US9304399B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9304399-B2 |
| Application number | US-201414279795-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 16, 2014 |
| Priority date | Sep 28, 2010 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
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A resist composition includes: a crosslinking material that is crosslinked in the presence of an acid; an acid amplifier; and a solvent.
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What is claimed is: 1. A method for producing a semiconductor device, comprising: forming a first resist pattern capable of supplying an acid, with a first resist composition, on a semiconductor substrate; forming a second resist layer by coating a second resist composition containing a crosslinking material that is crosslinked in the presence of an acid, an acid amplifier, an inclusion compound, and a solvent, on the first resist pattern, wherein the inclusion compound includ…
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