Gas injection system for chemical vapor deposition using sequenced valves

Patent metadata

Field	Value
Publication number	US-9303319-B2
Application number	US-97227010-A
Country	US
Kind code	B2
Filing date	Dec 17, 2010
Priority date	Dec 17, 2010
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.

First claim

What is claimed is:

1. A gas injection system for a rotating disk chemical vapor deposition system, the gas injection system comprising:
a) a gas manifold comprising a plurality of valves, each of the plurality of valves having an input that is coupled to a process gas source and having an output for providing process gas;
b) a plurality of gas injectors, each of the plurality of gas injectors having an input that is coupled to the output of one of the plurality of valves, and having an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor;
c) a controller having a plurality of outputs, each of the plurality of outputs being coupled to a control input of one of the plurality of valves, the controller controlling at least some of the plurality of valves to open and shut with a duty cycle as a function of a rotation rate of the rotating disk CVD reactor and that is chosen to achieve a uniform molar quantity of reactant material across at least a portion of the chemical vapor deposition reactor; and wherein the controller controls at least two of the plurality of valves to open sequentially; and
d) an in-situ deposition rate monitor that measures at least one of deposition rate or deposited film thickness in at least one of the plurality of zones in the chemical vapor deposition reactor, and having at least one output that is electrically connected to a sensor input of the controller, the controller generating signals that control the duty cycle as a function of the rotation rate and in response to the in-situ growth deposition rate monitor measurements.

2. The gas injection system of claim 1 wherein the gas source comprises an alkyl gas source.

3. The gas injection system of claim 1 wherein at least one of the plurality of valves comprises a MEMS valve.

4. The gas injection system of claim 1 wherein at least one of the plurality of valves comprises an electrically controlled valve.

5. The gas injection system of claim 1 wherein at least one of the plurality of valves comprises a pneumatic controlled valve.

6. The gas injection system of claim 1 wherein a diameter of orifices comprising an output of each of the plurality of gas injectors is the same.

7. The gas injection system of claim 1 wherein a diameter of an orifice comprising an output of at least one of the plurality of gas injectors is different from a diameter of an orifice comprising an output of another one of the plurality of gas injectors.

8. The gas injection system of claim 1 wherein at least one of the plurality of valves is always open during operation.

9. The gas injection system of claim 1 wherein the chemical vapor deposition reactor comprises a rotating disk reactor.

10. The gas injection system of claim 1 wherein the controller generates control signals having a duty cycle for opening at least one of the plurality of valves that is proportional to a radius squared of an aperture of a respective gas injector.

11. The gas injection system of claim 1 wherein a duty cycle for opening at least one of the plurality of valves is longer than one radial rotation of a rotating disk in the rotating disk chemical vapor deposition reactor.

12. The gas injection system of claim 1 wherein a duty cycle for opening at least one of the plurality of valves is an integer multiple of a rotation rate of a rotating disk in the rotating disk chemical vapor deposition reactor.

13. The gas injection system of claim 1 wherein a duty cycle for opening at least one of the plurality of valves enables uniform film thickness at a radial position in the rotating disk chemical vapor deposition reactor.

14. The gas injection system of claim 1 wherein a rotation rate of a rotating disk in the rotating disk chemical vapor deposition reactor is greater than about 120 rpms.

15. The gas injection system of claim 1 wherein at least one of the plurality of gas injector is movable.

16. The gas injection system of claim 1 wherein at least some of the plurality of the injectors are concentrically positioned.

17. The gas injection system of claim 1 further comprising a mass flow controller having an input that is coupled to the process gas source and an output that is coupled to an input of the gas manifold.

Assignees

• Quinn William E
• Armour Eric A
• Veeco Instr Inc

Inventors

• Quinn William E
• Armour Eric A

Classifications

• C23C16/52 Primary

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/45574 Primary

  Nozzles for more than one gas · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title