Zinc oxide-based conductive multilayer structure, process for producing the same, and electronic device

US9303308B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9303308-B2
Application numberUS-201113696653-A
CountryUS
Kind codeB2
Filing dateMay 11, 2011
Priority dateMay 14, 2010
Publication dateApr 5, 2016
Grant dateApr 5, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A zinc-oxide-based conductive stacked structure 1 includes a substrate 11 and, formed on at least one surface of the substrate, an undercoat layer 12 and a transparent conductive film 13 . The transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×10 20 to 9.8×10 20 cm −3 . The zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward.

First claim

Opening claim text (preview).

The invention claimed is: 1. A zinc-oxide-based conductive stacked structure comprising a substrate and, formed on at least one surface of the substrate, an undercoat layer and a transparent conductive film, wherein; the transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×10 20 to 9.8×10 20 cm −3 , and that the zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward, wherein each transparent conductive layer has a thickness of 50 nm or less, and the zinc-oxide-based conductive stacked structure is obtained by forming, on the undercoat layer through ion plating, a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material, to thereby form the transparent conductive film. 2. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has a thickness of 50 to 250 nm. 3. The zinc-oxide-based conductive stacked structure according to claim 1 , which exhibits an initial sheet resistivity R0 of 700 Ω/square or lower and which exhibits a first change ratio in sheet resistivity represented by T1=(R1−R0)/R0 of 1.0 or less and a second change ratio in sheet resistivity represented by T2=(R2−R0)/R0 of 4.0 or less, wherein R1 represents sheet resistivity after the stacked structure has been placed under 60° C. conditions for seven days, and R2 represents sheet resistivity after the stacked structure has been placed under 60° C.-90% RH conditions for seven days. 4. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the zinc-oxide-based conductive stacked structure is formed by: forming the undercoat layer on the substrate. 5. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein when forming the transparent conductive film, oxygen and argon are fed to a film-formation chamber at a ratio of oxygen gas flow rate to argon gas flow rate of 1:39 to 1:1. 6. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the substrate has a total light transmittance of 70% or higher and a haze of 10% or lower. 7. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the undercoat layer has a thickness of 0.01 to 20 μm. 8. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has a zinc oxide content of 85 mass % or higher. 9. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has 0.05 to 15 mass % of an additive selected from the group consisting of aluminum, gallium, boron, silicon, tin, indium, germanium, antimony, iridium, rhenium, cerium, zirconium, scandium, and yttrium. 10. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has a lattice constant of a c axis of 5.23 to 5.25 Å. 11. An electronic device comprising the zinc-oxide-based conductive stacked structure as recited in claim 1 . 12. A zinc-oxide-based conductive stacked structure comprising a substrate and, formed on at least one surface of the substrate, an undercoat layer and a transparent conductive film, wherein; the transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×10 20 to 9.8×10 20 cm −3 , and that the zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward, wherein each transparent conductive layer has a thickness of 50 nm or less, the zinc-oxide-based conductive stacked structure is obtained by forming, on the undercoat layer through ion plating, a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material, to thereby form the transparent conductive film, and the transparent conductive film has a total light transmittance of 70% or higher and a haze of 10% or lower. 13. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has a total light transmittance of 80% or higher and a haze of 5.2% or lower. 14. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein each transparent conductive layer has a thickness of 30 nm or less.

Assignees

Inventors

Classifications

  • with at least one layer of inorganic material and at least one layer of a composition containing a polymer binder · CPC title

  • Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means · CPC title

  • C23C14/086Primary

    of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

  • Deposition of sublayers, e.g. to promote adhesion of the coating (C23C14/027 takes precedence) · CPC title

  • Homopolymers or copolymers of acrylic acid esters · CPC title

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What does patent US9303308B2 cover?
A zinc-oxide-based conductive stacked structure 1 includes a substrate 11 and, formed on at least one surface of the substrate, an undercoat layer 12 and a transparent conductive film 13 . The transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×10 20 to 9.8×10 20 cm −3 …
Who is the assignee on this patent?
Nagamoto Koichi, Kondo Takeshi, Amino Yumiko, and 5 more
What technology area does this patent fall under?
Primary CPC classification C23C14/086. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).