Transparent conductive film and production method therefor
US-2015357077-A1 · Dec 10, 2015 · US
US9303308B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9303308-B2 |
| Application number | US-201113696653-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 11, 2011 |
| Priority date | May 14, 2010 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A zinc-oxide-based conductive stacked structure 1 includes a substrate 11 and, formed on at least one surface of the substrate, an undercoat layer 12 and a transparent conductive film 13 . The transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×10 20 to 9.8×10 20 cm −3 . The zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward.
Opening claim text (preview).
The invention claimed is: 1. A zinc-oxide-based conductive stacked structure comprising a substrate and, formed on at least one surface of the substrate, an undercoat layer and a transparent conductive film, wherein; the transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×10 20 to 9.8×10 20 cm −3 , and that the zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward, wherein each transparent conductive layer has a thickness of 50 nm or less, and the zinc-oxide-based conductive stacked structure is obtained by forming, on the undercoat layer through ion plating, a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material, to thereby form the transparent conductive film. 2. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has a thickness of 50 to 250 nm. 3. The zinc-oxide-based conductive stacked structure according to claim 1 , which exhibits an initial sheet resistivity R0 of 700 Ω/square or lower and which exhibits a first change ratio in sheet resistivity represented by T1=(R1−R0)/R0 of 1.0 or less and a second change ratio in sheet resistivity represented by T2=(R2−R0)/R0 of 4.0 or less, wherein R1 represents sheet resistivity after the stacked structure has been placed under 60° C. conditions for seven days, and R2 represents sheet resistivity after the stacked structure has been placed under 60° C.-90% RH conditions for seven days. 4. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the zinc-oxide-based conductive stacked structure is formed by: forming the undercoat layer on the substrate. 5. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein when forming the transparent conductive film, oxygen and argon are fed to a film-formation chamber at a ratio of oxygen gas flow rate to argon gas flow rate of 1:39 to 1:1. 6. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the substrate has a total light transmittance of 70% or higher and a haze of 10% or lower. 7. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the undercoat layer has a thickness of 0.01 to 20 μm. 8. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has a zinc oxide content of 85 mass % or higher. 9. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has 0.05 to 15 mass % of an additive selected from the group consisting of aluminum, gallium, boron, silicon, tin, indium, germanium, antimony, iridium, rhenium, cerium, zirconium, scandium, and yttrium. 10. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has a lattice constant of a c axis of 5.23 to 5.25 Å. 11. An electronic device comprising the zinc-oxide-based conductive stacked structure as recited in claim 1 . 12. A zinc-oxide-based conductive stacked structure comprising a substrate and, formed on at least one surface of the substrate, an undercoat layer and a transparent conductive film, wherein; the transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×10 20 to 9.8×10 20 cm −3 , and that the zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward, wherein each transparent conductive layer has a thickness of 50 nm or less, the zinc-oxide-based conductive stacked structure is obtained by forming, on the undercoat layer through ion plating, a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material, to thereby form the transparent conductive film, and the transparent conductive film has a total light transmittance of 70% or higher and a haze of 10% or lower. 13. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein the transparent conductive film has a total light transmittance of 80% or higher and a haze of 5.2% or lower. 14. The zinc-oxide-based conductive stacked structure according to claim 1 , wherein each transparent conductive layer has a thickness of 30 nm or less.
with at least one layer of inorganic material and at least one layer of a composition containing a polymer binder · CPC title
Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means · CPC title
of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title
Deposition of sublayers, e.g. to promote adhesion of the coating (C23C14/027 takes precedence) · CPC title
Homopolymers or copolymers of acrylic acid esters · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.